IXFN62N80Q3 IXYS, IXFN62N80Q3 Datasheet

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IXFN62N80Q3

Manufacturer Part Number
IXFN62N80Q3
Description
Q3-Class HiPerFETs
Manufacturer
IXYS
Datasheet

Specifications of IXFN62N80Q3

Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
49
Rds(on), Max, Tj=25°c, (?)
0.14
Ciss, Typ, (pf)
13600
Qg, Typ, (nc)
270
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
960
Rthjc, Max, (ºc/w)
0.13
HiperFET
Power MOSFET
Q3-Class
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
50/60 Hz, RMS, t = 1minute
I
Mounting Torque for Base Plate
Terminal Connection Torque
V
V
V
V
V
Test Conditions
S
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
≤ 1mA,
= 0V, I
= V
= ±30V, V
= V
= 10V, I
DM
, V
GS
DSS
, I
DD
D
, V
D
D
= 3mA
≤ V
= 8mA
= 31A, Note 1
GS
DS
= 0V
t = 1s
DSS
= 0V
, T
J
GS
≤ 150°C
= 1MΩ
T
Advance Technical Information
J
= 125°C
JM
IXFN62N80Q3
800
3.5
Min.
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.3/11.5
1.5/13
2500
3000
Typ.
800
800
±30
±40
180
960
150
49
62
50
30
5
±200 nA
Nm/lb.in.
Nm/lb.in.
Max.
140 mΩ
6.5
50 μA
4 mA
V/ns
V~
V~
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
t
miniBLOC
G = Gate
S = Source
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
Advantages
Applications
D25
rr
International Standard Package
Low
miniBLOC with Aluminum Nitride
Isolation
Low Package Inductance
Fast Intrinsic Rectifier
Low R
High Power Density
Easy to Mount
Space Savings
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
DS(on)
DSS
Intrinsic Gate Resistance
E153432
DS(on)
≤ ≤ ≤ ≤ ≤
=
=
≤ ≤ ≤ ≤ ≤
G
and Q
D = Drain
S
140mΩ Ω Ω Ω Ω
G
800V
49A
300ns
D
DS100342(05/11)
S

Related parts for IXFN62N80Q3

IXFN62N80Q3 Summary of contents

Page 1

... GSS DSS DS DSS 10V 31A, Note 1 DS(on © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFN62N80Q3 Maximum Ratings 800 = 1MΩ 800 GS ±30 ±40 49 180 ≤ 150° 960 -55 ... +150 150 -55 ... +150 2500 3000 1 ...

Page 2

... I = 31A 90 DSS D 120 0.05 Characteristic Values Min. Typ. JM 1.6 13.4 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN62N80Q3 SOT-227B (IXFN) Outline Max Ω (M4 screws (4x) supplied 0.13 °C/W °C/W Max 250 A 1.5 V 300 ns μ ...

Page 3

... Value vs 125º 25º -50 80 100 120 140 IXFN62N80Q3 Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V 62A D -25 ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 100 = 125ºC 25ºC - 40ºC 7.0 7.5 8.0 8.5 9 25ºC J 1.0 1.2 1.4 1000 C iss 100 C oss C rss IXFN62N80Q3 Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 400V ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.01 0.1 Pulse Width - Seconds IXFN62N80Q3 1 10 IXYS REF: F_62N80Q3(Q9) 5-20-11 ...

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