IXFN62N80Q3 IXYS, IXFN62N80Q3 Datasheet - Page 4

• Manufacturer Part Number: IXFN62N80Q3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFN62N80Q3

• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 49
• Rds(on), Max, Tj=25°c, (?): 0.14
• Ciss, Typ, (pf): 13600
• Qg, Typ, (nc): 270
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 960
• Rthjc, Max, (ºc/w): 0.13

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
100
100
200
180
160
140
120
100
90
80
70
60
50
40
30
20
10
10
80
60
40
20
0
0
4.0
0.2
0
f
= 1 MHz
4.5
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
0.4
5.0
10
5.5
0.6
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
J
15
= 125ºC
6.0
V
V
V
0.8
DS
SD
GS
T
6.5
20
- Volts
- Volts
J
- Volts
= 125ºC
7.0
1.0
T
25
J
= 25ºC
C iss
C oss
C rss
25ºC
7.5
30
1.2
8.0
35
- 40ºC
8.5
1.4
9.0
40
1000
100
100
16
14
12
10
90
80
70
60
50
40
30
20
10
10
8
6
4
2
0
0
1
0
10
0
V
I
I
D
G
DS
10
T
T
Single Pulse
= 31A
= 10mA
50
J
C
= 400V
= 150ºC
= 25ºC
Fig. 12. Forward-Bias Safe Operating Area
20
R
DS(on)
100
Fig. 8. Transconductance
30
Limit
Fig. 10. Gate Charge
150
Q
40
G
- NanoCoulombs
I
D
V
- Amperes
DS
IXFN62N80Q3
200
50
100
- Volts
60
250
70
T
J
300
= - 40ºC
125ºC
25ºC
80
350
90
250µs
1ms
1,000
100
400