IXTH36P15P IXYS, IXTH36P15P Datasheet - Page 2

• Manufacturer Part Number: IXTH36P15P
• Description: PolarP Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTH36P15P

• Vdss, Max, (v): -150
• Id(cont), Tc=25°c, (a): -36
• Rds(on), Max, Tj=25°c, (?): 0.11
• Ciss, Typ, (pf): 3100
• Qg, Typ, (nc): 55
• Trr, Typ, (ns): 228
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-247

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
V
V
Resistive Switching Times
V
R
V
(TO-3P, TO-247)
(TO-220)
V
Repetitive, Pulse Width Limited by T
I
I
V
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
GS
R
G
= -18A, V
= -18A, -di/dt = -100A/μs
= - 75V, V
= -10V, I
= 0V, V
= -10V, V
= 3.3Ω (External)
= -10V, V
= 0V
DS
GS
D
GS
DS
DS
= - 25V, f = 1MHz
= 0.5 • I
= 0V, Note 1
= 0V
4,835,592
4,881,106
= 0.5 • V
= 0.5 • V
D25
, Note 1
4,931,844
5,017,508
5,034,796
DSS
DSS
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
11
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
3100
Typ.
-17.6
0.25
0.50
Typ.
610
100
228
2.0
19
21
31
36
15
55
20
18
0.42 °C/W
Max.
Max.
- 140
- 3.3
6,404,065 B1
6,534,343
6,583,505
- 36
°C/W
°C/W
μC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
IXTA36P15P
IXTH36P15P
6,683,344
6,710,405 B2 6,759,692
6,710,463
6,727,585
6,771,478 B2 7,071,537
7,005,734 B2
7,063,975 B2
IXTP36P15P
IXTQ36P15P
7,157,338B2