IXTH36P15P IXYS, IXTH36P15P Datasheet - Page 5

• Manufacturer Part Number: IXTH36P15P
• Description: PolarP Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTH36P15P

• Vdss, Max, (v): -150
• Id(cont), Tc=25°c, (a): -36
• Rds(on), Max, Tj=25°c, (?): 0.11
• Ciss, Typ, (pf): 3100
• Qg, Typ, (nc): 55
• Trr, Typ, (ns): 228
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-247

© 2009 IXYS CORPORATION, All Rights Reserved
10,000
1,000
-100
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-90
-80
-70
-60
-50
-40
-30
-20
-10
100
10
-5
0
0
-3.5
-0.5
0
f
-4.0
= 1 MHz
-1.0
-5
-4.5
-1.5
-10
Fig. 9. Forward Voltage Drop of
-5.0
Fig. 7. Input Admittance
Fig. 11. Capacitance
-2.0
-15
-5.5
Intrinsic Diode
V
V
V
GS
SD
T
DS
J
-6.0
-2.5
- Volts
- Volts
= 125ºC
-20
- Volts
-6.5
-3.0
-25
T
J
= - 40ºC
-7.0
125ºC
25ºC
T
-3.5
-30
J
= 25ºC
C rss
C iss
C oss
-7.5
-4.0
-35
-8.0
-4.5
-8.5
-40
-
100
-
-10
10
-
35
30
25
20
15
10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
5
0
-
10
0
0
R
DS(on)
V
I
I
D
G
DS
5
= -18A
= -1mA
-10
Limit
= -100V
Fig. 12. Forward-Bias Safe Operating Area
10
IXTA36P15P
IXTH36P15P
-20
15
Fig. 8. Transconductance
Fig. 10. Gate Charge
20
-30
Q
I
D
G
V
- Amperes
DS
- NanoCoulombs
25
- Volts
-
100
-40
DC
30
-50
25µs
100µs
1ms
10ms
100ms
35
T
J
IXTP36P15P
IXTQ36P15P
= - 40ºC
125ºC
25ºC
40
-60
T
T
Single Pulse
J
C
= 150ºC
= 25ºC
45
-70
50
-
1000
-80
55