BTS5030-1EJA Infineon Technologies, BTS5030-1EJA Datasheet - Page 15

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BTS5030-1EJA

Manufacturer Part Number
BTS5030-1EJA
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTS5030-1EJA

Packages
PG-DSO-8
Channels
1.0
Ron @ Tj = 25°c
30.0 mOhm
Recommended Operating Voltage Min.
5.0 V
Recommended Operating Voltage Max.
28.0 V
Il(sc)
36.0 A

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5
The power stage is built using an N-channel vertical power MOSFET (DMOS) with charge pump.
5.1
The ON-state resistance
shows the dependencies in terms of temperature and supply voltage for the typical ON-state resistance. The
behavior in reverse polarity is described in
Figure 8
A high signal at the input pin (see
is optimized in terms of EMC emission.
5.2
Figure 9
Figure 9
Data Sheet
PROFET™+ 12V
55
45
35
25
15
-40
shows the typical timing when switching a resistive load.
Power Stage
Output ON-state Resistance
Typical ON-state Resistance
Turn ON/OFF Characteristics with Resistive Load
Switching a Resistive Load Timing
-10
90% V
10% V
70% V
30% V
V
V
IN_H
IN_L
20
V
S
S
Junction Temperature (Tj)
S
S
IN
OUT
R
DS(ON)
t
ON_DELAY
50
depends on the supply voltage as well as the junction temperature
Chapter
t
ON
80
8) causes the power DMOS to switch ON with a dedicated slope, which
Chapter
110
dV/dt
ON
6.4.
140
15
t
100
OFF_DELAY
90
80
70
60
50
40
30
20
10
0
0
t
OFF
dV/dt
3
OFF
6
Supply Voltage V
Switching times.vsd
9
Rev. 2.1, 2011-06-20
S
BTS5030-1EJA
t
(V)
t
12
Power Stage
T
J
Rdson_30.vsd
15
.
Figure 8
18

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