BSS159N Infineon Technologies, BSS159N Datasheet
BSS159N
Specifications of BSS159N
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BSS159N Summary of contents
Page 1
... T =25 °C D,pulse A I =0. = /dt di /dt =200 A/µs, T =150 °C j,max V GS JESD22-A114 -HBM P T =25 °C tot stg page 1 BSS159N 60 8 0.13 PG-SOT- Marking SGs SGs 1) bands Value Unit 0.23 A 0.18 0.92 6 kV/µs ±20 V 0(<250V) 0.36 W -55 ... 150 °C ...
Page 2
... GSS =10 V DSS =0.07 A DS(on = =0. |>2 DS(on)max =0. =26 µA GS(th page 2 BSS159N Values Unit min. typ. max 350 K -3.5 -2.8 -2 0.1 µ 130 - - mA Ω 1.7 3.5 , 0.1 0. ...
Page 3
... =- plateau =25 ° S,pulse V =- =0. =25 ° = =0. /dt =100 A/µ page 3 BSS159N Values Unit min. typ. max 7 3 3.1 4 2 ...
Page 4
... A 4 Max. transient thermal impedance Z =f(t thJA p parameter µs 100 µ 100 [V] DS page 4 BSS159N ≥ 120 T [° 0.5 0.2 0.1 0.05 0.02 single pulse 0. [s] p 160 ...
Page 5
... V Rev. 2.2 6 Typ. drain-source on resistance R =f(I DS(on) parameter 0 -0 Typ. forward transconductance g =f 0.3 0.25 0.2 0.15 0.1 0. 0.0 [V] GS page 5 BSS159N ); T =25 ° -0.1 V 0.1 V -0.2 V 0 0.1 0.2 0.3 0.4 0.5 I [A] D =25 °C j 0.1 0.2 I [A] D 0.6 0.3 2009-07-29 ...
Page 6
... Typ. capacitances C =f µ -2.5 -2 [V] page 6 BSS159N ); =26 µ max typ min - 100 140 T [° MHz GS Ciss Coss Crss [V] DS 180 30 2009-07-29 ...
Page 7
... SD 16 Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 BSS159N ); I =0.16 A pulsed D DD 0.5 V DS(max) 0.2 V DS(max) 0.8 V DS(max) 0.5 1 1.5 Q [nC] gate ate 2009-07-29 ...
Page 8
... Package Outline: Footprint: Dimensions in mm Rev. 2.2 SOT-23 Packaging: page 8 BSS159N 2009-07-29 ...
Page 9
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 page 9 BSS159N 2009-07-29 ...