BSS159N Infineon Technologies, BSS159N Datasheet - Page 7

• Manufacturer Part Number: BSS159N
• Manufacturer: Infineon Technologies

Specifications of BSS159N

• Package: SOT-23
• Vds (max): 60.0 V
• Id (max): 0.23 A
• Idpuls (max): 0.92 A
• Rds (on) (max) (@10v): 3.5 mOhm

Rev. 2.2
13 Forward characteristics of reverse diode
I
parameter: T
15 Drain-source breakdown voltage
V
F
=f(V
BR(DSS)
0.001
0.01
0.1
70
65
60
55
50
SD
1
-60
=f(T
)
0
j
); I
j
-20
D
=250 µA
0.4
150 °C
20
V
T
SD
j
60
[°C]
0.8
[V]
25 °C
100
150 °C, 98%
25 °C, 98%
1.2
140
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
-1
-2
-3
-4
V
7
6
5
4
3
2
1
0
g(th)
g s(th)
GS
0
gate
); I
DD
0.2 V
Q
D
=0.16 A pulsed
g s
DS(max)
0.5
0.5 V
Q
Q
gate
DS(max)
g
Q
0.8 V
1
sw
[nC]
Q
DS(max)
g d
1.5
BSS159N
Q
g ate
2009-07-29
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