BGB707L7ESD Infineon Technologies, BGB707L7ESD Datasheet - Page 7

• Manufacturer Part Number: BGB707L7ESD
• Manufacturer: Infineon Technologies

Specifications of BGB707L7ESD

• Packages: TSLP-7-1
• Gain (typ): -
• F (typ): 0.4 dB
• P-1db (out): 10.0 dBm
• I (typ): 2.1 - 25.0 mA
• Frequency Hz: 50 MHz - 10 GHz

SiGe:C Wideband MMIC LNA with Integrated ESD Protection
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Applications
As Low Noise Amplifier (LNA) in
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Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
BGB707L7ESD
Data Sheet
High performance general purpose wideband MMIC LNA
ESD protection integrated for all pins (3 kV for RF input vs. GND,
2 kV for all other pin combinations, HBM)
Integrated active biasing circuit enables stable operation point
against temperature- and processing-variations
Excellent noise figure from Infineon´s reliable high volume SiGe:C
technology
High gain and linearity at low current consumption
Operation voltage: 1.8 V to 4.0 V
Adjustable operation current 2.1 mA to 25 mA by external resistor
Power-off function
Very small and leadless package TSLP-7-1, 2.0 x 1.3 x 0.4 mm
Pb-free (RoHS compliant) and halogen-free (WEEE compliant) package
Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB,
WiFi, Bluetooth
Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB)
and C-band LNB
Multimedia applications such as mobile/portable TV, CATV, FM Radio
3G/4G UMTS/LTE mobile phone applications
ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
Features
Package
TSLP-7-1
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Marking
AZ
Revision 3.2, 2010-06-30
BGB707L7ESD