BGB707L7ESD Infineon Technologies, BGB707L7ESD Datasheet - Page 8

• Manufacturer Part Number: BGB707L7ESD
• Manufacturer: Infineon Technologies

Specifications of BGB707L7ESD

• Packages: TSLP-7-1
• Gain (typ): -
• F (typ): 0.4 dB
• P-1db (out): 10.0 dBm
• I (typ): 2.1 - 25.0 mA
• Frequency Hz: 50 MHz - 10 GHz

2
The BGB707L7ESD is a Silicon Germanium Carbon (SiGe:C) low noise amplifier MMIC with integrated ESD
protection and active biasing. The device is as flexible as a discrete transistor and features high gain, reduced
power consumption and very low distortion for a very wide range of applications.
The device is based upon Infineon Technologies cost effective SiGe:C technology and comes in a low profile
TSLP-7-1 leadless green package
Figure 1
Table 1
Pin
1
2
3
4
5
6
7
Data Sheet
Name
V
V
RF
RF
V
Adj
GND
CC
Bias
Ctrl
Product Brief
Pinning PG-TSLP-7-1
Pinning Table
in
out
Function
Supply voltage
Bias reference voltage
RF input
RF output
On/Off control voltage
Current adjustment pin
DC/RF GND
1
2
8
6
3
5
7
4
Revision 3.2, 2010-06-30
BGB707L7ESD
Product Brief