IXFB 50N80Q2 IXYS Corporation, IXFB 50N80Q2 Datasheet - Page 2

• Manufacturer Part Number: IXFB 50N80Q2
• Description: TRANS MOSFET N-CH 800V 50A 3PLUS 264
• Manufacturer: IXYS Corporation

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
IXYS reserves the right to change limits, test conditions, and dimensions.
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS MOSFETs and IGBTs are covered by
d(on)
d(off)
S
SM
RM
one or moreof the following U.S. patents:
r
f
rr
fs
thJC
thCK
SD
iss
oss
rss
G(on)
GD
GS
RM
Test Conditions
V
Test Conditions
V
Repetitive;
pulse width limited by T
I
F
GS
DS
= I
I
-di/dt = 100 A/µs
V
F
S
= 0 V
R
= 20 V; I
V
V
R
V
= 25A
, V
GS
GS
GS
= 100 V
G
GS
= 1 Ω (External)
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V, Note 1
D
= 0.5 • I
4,835,592
4,850,072
4,881,106
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
JM
4,931,844
5,017,508
5,034,796
Note 1
(T
DSS
DSS
(T
J
J
, I
, I
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
D
D
5,049,961
5,063,307
5,187,117
= 0.5 • I
= 0.5 • I
D25
D25
5,237,481
5,381,025
5,486,715
min.
min.
32
Characteristic Values
Characteristic Values
7200
1200
0.13
typ.
typ.
230
260
120
1.1
6,162,665
6,259,123 B1
6,306,728 B1
48
26
25
60
13
56
8
0.14
max.
max.
200
300
1.5
50
K/W
K/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
A
V
PLUS 264
6,683,344
6,710,405B2
6,710,463
Terminals:
TM
6,727,585
6,759,692
Outline
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
IXFB50N80Q2