ARF463AP1G Microsemi Corporation, ARF463AP1G Datasheet - Page 2

• Manufacturer Part Number: ARF463AP1G
• Description: N-channel Enhancement Mode Power Mosfets
• Manufacturer: Microsemi Corporation

DYNAMIC CHARACTERISTICS
FUNCTIONAL CHARACTERISTICS
1
Symbol
Symbol
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
t
t
C
C
G
C
d(on)
d(off)
η
ψ
oss
t
t
rss
iss
PS
r
f
30
25
20
15
10
5
0
8
6
4
2
0
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 10:1
30
2
V
Figure 3, Typical Transfer Characteristics
GS
V DS > I D (ON) x R DS (ON)MAX.
T J = +25°C
T J = +125°C
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1, Typical Gain vs Frequency
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
45
4
FREQUENCY (MHz)
60
T J = -55°C
75
6
T J = -55°C
90
P
V
out
DD
Class C
8
= 150W
= 150V
105
120
10
V
GS
I
D
Test Conditions
Test Conditions
= 0V
V
= I
f = 81.36 MHz
DD
P
V
V
R
D[Cont.]
f = 1 MHz
V
out
GS
DS
G
GS
= 0.5 V
= 1.6Ω
= 100W
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
= 50V
= 15V
= 0V
3000
1000
V
500
100
@ 25°C
36
10
50
10
DD
.5
.1
Figure 4, Typical Maximum Safe Operating Area
5
1
.1
DSS
V
1
V
DS
DS
= 125V
LIMITED BY R DS (ON)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
OPERATION HERE
T C =+25°C
T J =+150°C
SINGLE PULSE
.5
1
No Degradation in Output Power
10
MIN
MIN
13
70
5
10
13.5
TYP
TYP
670
120
5.6
4.3
4.2
15
75
50
C iss
C oss
C rss
100
50
ARF463A_BP1(G)
MAX
MAX
500
200
100mS
1mS
10mS
100uS
DC
UNIT
UNIT
dB
pF
ns
%