ARF463AP1G Microsemi Corporation, ARF463AP1G Datasheet - Page 3

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ARF463AP1G

Manufacturer Part Number
ARF463AP1G
Description
N-channel Enhancement Mode Power Mosfets
Manufacturer
Microsemi Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ARF463AP1G
Quantity:
1 400
Part Number:
ARF463AP1G
Manufacturer:
MICROSEMI/美高森美
Quantity:
20 000
0.005
0.001
0.05
0.01
Figure 5, Typical Threshold Voltage vs Temperature
160
120
1.2
1.1
1.0
0.9
0.8
0.7
0.8
0.1
80
40
0
10
-50 -25
0
-5
Figure 7, Typical Power Out vs Power In
f = 81.36 MHz
V
DD
Class C
T
= 150V
C
2
D=0.5
Figure 7, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
, CASE TEMPERATURE (°C)
0.02
0.01
P
0.05
0.2
0
0.1
IN
, POWER IN (WATTS)
Freq. (MHz)
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Z in - Gate shunted with 25Ω
Z
25
13.5
OL
4
100
2.0
10
27
40
65
80
- Conjugate of optimum load for 100 Watts output at V dd = 125V
50
-4
SINGLE PULSE
6
75
100 125 150
8
RECTANGULAR PULSE DURATION (SECONDS)
10
-3
10
.30 + j .42
.46 + j 2.0
.87 + j 3.7
2.1 - j 6.4
.74 - j 3.3
Z in (Ω)
24 - j 5.0
7.8 - j 11
10
-2
Figure 8, Typical Common Source Amplifier Gain vs Power Out
I
DQ
16
12
14
12
10
= 50mA
8
6
8
4
0
0
1
V
DS
Figure 6, Typical Output Characteristics
10
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
55 - j 4.8
41 - j 24
23 - j 26.2
13.6 - j 22
6.1 - j 14.2
4.2 - j 10.7
2.7 - j 7.1
-1
P
V GS =15V
Z
5
OUT
OL
40
, POWER OUT (WATTS)
(Ω)
10
Note:
Peak T J = P DM x Z θJC + T C
Duty Factor D = t 1 / t
80
15
1.0
t 1
f = 81.36 MHz
V
t 2
20
DD
Class C
7.5V
6.5V
5.5V
10V
120
= 150V
9V
8V
7V
6V
2
25
ARF463A_BP1(G)
160
30
10

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