SI7117DN Vishay, SI7117DN Datasheet - Page 2

• Manufacturer Part Number: SI7117DN
• Description: P-channel 150-v D-s Mosfet
• Manufacturer: Vishay

Notes:
a.
b.
www.vishay.com
2
Si7117DN
Vishay Siliconix
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
DS
GS(th)
Surface Mounted on 1” x 1” FR4 Board.
Maximum under steady state conditions is 81 _C/W.
Temperature Coefficient
Temperature Coefficient
b
Parameter
a
a
a, b
Parameter
a
a
_
DV
Symbol
DV
V
r
r
GS(th)
I
DS(on)
DS(on)
t
t
I
C
I
I
C
V
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
R
DS
DS
oss
t
t
iss
rss
gd
fs
gs
r
f
g
g
/T
Steady State
/T
t p 10 sec
J
J
New Product
V
I
V
D
DS
V
DS
^ –1.0 A, V
DS
= –75 V, V
= –150 V, V
V
V
V
V
= –25 V, V
V
V
V
V
V
V
DS
GS
DS
DS
DS
DS
DD
DD
GS
Symbol
GS
Test Condition
v 15 V, V
= –10 V, I
= –15 V, I
R
R
= V
= –150 V, V
= 0 V, V
= –75 V, R
= –75 V, R
= 0 V, I
= –6 V, I
thJC
thJA
f = 1 MHz
GS
GS
GEN
I = 250 mA
I
D
GS
GS
, I
= –250 mA
= –10 V, I
D
D
GS
= –10 V, R
= 0 V, f = 1 MHz
D
= 0 V, T
= –250 mA
GS
D
D
= –250 mA
L
L
= –0.5 A
=
GS
= –0.5 A
= –0.5 A
= 7.5 W
= 7.5 W
= –10 V
"
= 0 V
20 V
D
J
= –0.5 A
Typical
= 55_C
g
g
= 6 W
31
8
Min
–150
–2.5
–1.6
Maximum
39
10
Typ
1.05
S-51876—Rev. A, 12-Sep-05
145
340
6.7
1.0
2.2
7.7
1.5
2.5
30
16
11
16
11
9
7
Document Number: 73478
Max
–100
–4.5
–10
510
1.2
1.3
–1
12
17
25
17
11
Unit
_C/W
_C/W
mV/_C
mV/_C
Unit
mA
pF
p
nC
ns
ns
ns
V
V
A
W
W
S
W
C
A