SI7117DN Vishay, SI7117DN Datasheet - Page 5

• Manufacturer Part Number: SI7117DN
• Description: P-channel 150-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 73478
S-51876—Rev. A, 12-Sep-05
–0.2
–0.5
1.3
1.0
0.7
0.4
0.1
0.1
10
1
0.0
–50
I
D
–25
= 250 mA
Source-Drain Diode Forward Voltage
0.2
V
SD
0
– Source-to-Drain Voltage (V)
0.4
Threshold Voltage
T
J
T
– Temperature (_C)
25
J
= 150_C
0.6
50
75
0.8
100
10.00
1.0
0.00
1.00
0.10
0.01
_
25_C
125
0.1
*V
1.2
150
*Limited by r
GS
New Product
Single Pulse
T
Safe Operating Area at T
A
u minimum V
= 25_C
V
DS
1.0
– Drain-to-Source Voltage (V)
DS(on)
GS
10.0
at which r
DS(on)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50
40
30
20
10
A
0.00
0
0.01
100.0
= 25_C
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
100 us
10 us
1 ms
10 ms
100 ms
1 s
10 s
100 s
dc
2.00
0.1
1000.0
V
GS
– Gate-to-Source Voltage (V)
4.00
1
Time (sec)
T
A
Vishay Siliconix
= 25_C
6.00
10
Si7117DN
T
T
A
A
www.vishay.com
8.00
100
= 25_C
= 125_C
1000
10.00
5