MT9HTF12872CHY-667 Micron Semiconductor Products, MT9HTF12872CHY-667 Datasheet

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MT9HTF12872CHY-667

Manufacturer Part Number
MT9HTF12872CHY-667
Description
512mb, 1gb X72, Ecc, Sr 200-pin Ddr2 Sdram Socdimm
Manufacturer
Micron Semiconductor Products
Datasheet
Table 1:
DDR2 SDRAM SOCDIMM
MT9HTF6472CH – 512MB
MT9HTF12872CH – 1GB
For component data sheets, refer to Micron’s Web site:
Features
• 200-pin, small-outline clocked dual in-line memory
• Fast data transfer rates: PC2-4200, PC2-5300,
• 512MB (64 Meg x 72) and 1GB (128 Meg x 72)
• Supports ECC error detection and correction
• V
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Phase-lock loop (PLL) to reduce system clock line
• Gold edge contacts
• Single rank
• I
PDF: 09005aef828eddb4/Source: 09005aef828edcf5
HTF9C64_128x72CH.fm - Rev. B 10/07 EN
module (SOCDIMM)
or PC2-6400
operation
loading
Speed
Grade
2
DD
DDSPD
C temperature sensor
-80E
-800
-667
-53E
= V
DD
= +3.0V to +3.6V
Q = +1.8V
Key Timing Parameters
Nomenclature
Products and specifications discussed herein are subject to change by Micron without notice.
Industry
PC2-6400
PC2-6400
PC2-5300
PC2-4200
CL = 6
800
t
CK
512MB, 1GB (x72, ECC, SR) 200-Pin DDR2 SDRAM SOCDIMM
CL = 5
Data Rate (MT/s)
800
667
667
www.micron.com
1
CL = 4
533
533
533
533
Figure 1:
Notes: 1. Contact Micron for industrial temperature
Options
• Operating temperature
• Package
• Frequency/CAS latency
PCB height: 30.0mm (1.18in)
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 200-pin DIMM (Pb-free)
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-533)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Contact Micron for product availability.
3. Not recommended for new designs.
module offerings.
CL = 3
400
400
200-Pin SOCDIMM (MO-224 R/C B)
t
(ns)
12.5
RCD
15
15
15
A
A
1
≤ +85°C)
≤ +70°C)
©2007 Micron Technology, Inc. All rights reserved.
2
2
3
(ns)
12.5
t
15
15
15
RP
Marking
Features
None
-80E
-53E
-800
-667
Y
I
(ns)
t
55
55
55
55
RC

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MT9HTF12872CHY-667 Summary of contents

Page 1

DDR2 SDRAM SOCDIMM MT9HTF6472CH – 512MB MT9HTF12872CH – 1GB For component data sheets, refer to Micron’s Web site: Features • 200-pin, small-outline clocked dual in-line memory module (SOCDIMM) • Fast data transfer rates: PC2-4200, PC2-5300, or PC2-6400 • 512MB (64 ...

Page 2

... Data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT9HTF12872CHY-667E1. PDF: 09005aef828eddb4/Source: 09005aef828edcf5 HTF9C64_128x72CH.fm - Rev. B 10/07 EN ...

Page 3

Pin Assignments and Descriptions Table 5: Pin Assignments 200-Pin SOCDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ18 101 REF 3 DQ0 53 DQ19 103 105 DQ1 57 ...

Page 4

Table 6: Pin Descriptions Symbol Type A0–A13 Input (SSTL_18) BA0–BA2 Input (SSTL_18) CK0, CK0# Input (SSTL_18) CKE0 Input (SSTL_18) DM0–DM8 Input (SSTL_18) ODT0 Input (SSTL_18) RAS#, CAS#, WE# Input (SSTL_18) S0# Input (SSTL_18) SA0–SA1 Input (SSTL_18) SCL Input (SSTL_18) RESET# ...

Page 5

Functional Block Diagram Figure 2: Functional Block Diagram S0# DQS0# DQS0 DM0 DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ DQS1# DQS1 DM1 DQ8 DQ DQ9 DQ DQ10 DQ DQ11 DQ DQ12 ...

Page 6

General Description The MT9HTF6472CH and MT9HTF12872CH DDR2 SDRAM modules are high-speed, CMOS, dynamic random access 512MB and 1GB memory modules, organized in a x72 configuration. These modules use a 512Mb DDR2 SDRAM device with four internal banks or a 1Gb ...

Page 7

Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated on the ...

Page 8

I Specifications DD Table 9: DDR2 I Specifications and Conditions – 512MB DD Values are shown for the MT9HTF6472 DDR2 SDRAM only and are computed from the values specified in the 512Mb (64 Meg x 8) component data sheet Parameter/Condition ...

Page 9

Table 10: DDR2 I Specifications and Conditions – 1GB DD Values are shown for the MT9HTF12872 DDR2 SDRAM only and are computed from the values specified in the 1Gb (128 Meg x 8) component data sheet Parameter/Condition Operating one bank ...

Page 10

PLL Specifications Table 11: PLL Device Specifications CUA845 device or JESD82-21 equivalent Parameter Symbol V DC high-level input voltage V DC low-level input voltage Input voltage (limits high-level input voltage low-level input voltage V Input ...

Page 11

Temperature Sensor The temperature sensor continuously monitors the module’s temperature and can be read back at any time over the I the “Mobile Platform Memory Module Thermal Sensor Component Specification,” which is found in JEDEC standard JESD21-C. Table 13: Temperature ...

Page 12

Serial Presence-Detect Table 15: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage with temperature sensor option Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT SPD input ...

Page 13

Module Dimensions Figure 3: 200-Pin DDR2 SOCDIMM 2.0 (0.079) R (2X) 1.0 (0.039) R (2X) U1 1.8 (0.071) (2X) 6.0 (0.236) TYP 2.0 (0.079) TYP U9 3.5 (0.138) TYP Pin 200 1.0 (0.039) TYP Notes: 1. All dimensions are in ...

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