BTB1412J3 Cystech Electonics Corp., BTB1412J3 Datasheet

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BTB1412J3

Manufacturer Part Number
BTB1412J3
Description
Low Vcesat Pnp Epitaxial Planar Transistor
Manufacturer
Cystech Electonics Corp.
Datasheet
Low Vcesat PNP Epitaxial Planar Transistor
BTB1412J3
Features
Symbol
Absolute Maximum Ratings
Parameter
BTB1412J3
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Low V
Excellent DC current gain characteristics
Complementary to BTD2118J3
Pb-free package
Note : *1
CE
.
(sat), V
Single Pulse Pw=10ms
BTB1412J3
B:Base
C:Collector
E:Emitter
CE
(sat)=-0.36 V (typical), at I
CYStech Electronics Corp.
(Ta=25 C)
Pd(T
Pd(T
C
Symbol
I
I
V
V
V
C(Pulse)
/ I
C(DC)
Tstg
A
C
Tj
CBO
CEO
EBO
=25℃)
=25℃)
B
= -4A / -0.1A
Outline
B C E
TO-252
-55~+150
Limits
-10
150
-40
-30
10
-6
-5
1
CYStek Product Specification
Spec. No. : C815J3
Issued Date : 2006.03.14
Revised Date :2006.03.20
Page No. : 1/7
*1
Unit
W
V
V
V
A
C
C

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BTB1412J3 Summary of contents

Page 1

... Pb-free package Symbol BTB1412J3 B:Base C:Collector E:Emitter Absolute Maximum Ratings Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature . Note : *1 Single Pulse Pw=10ms BTB1412J3 CYStech Electronics Corp -4A / -0. Outline (Ta=25 C) Symbol V CBO V CEO V EBO I C(DC) I C(Pulse) Pd(T =25℃ ...

Page 2

... Symbol Min. BV -40 CBO BV -30 CEO BV -6 EBO I - CBO I - EBO *V - CE(sat) *h 180 Cob - Ordering Information Device Package TO-252 BTB1424J3 (Pb-free) BTB1412J3 CYStech Electronics Corp. Typ. Max. Unit - - -0.5 µA - -0.5 µ 390 - 120 - MHz Shipping 2500 pcs / Tape & Reel Spec ...

Page 3

... VBESAT@IC=10IB 1000 100 1 10 100 Collector Current---IC(mA) Output Characteristics Collector-to-Emitter Voltage---VCE(V) BTB1412J3 CYStech Electronics Corp. 10000 VCE=2V 1000 VCE=1V 100 10 1000 10000 4.5 3.5 2.5 1.5 0.5 1000 10000 12 IB=50mA 10 IB=25mA IB=20mA IB=15mA IB=10mA IB=5mA ...

Page 4

... Characteristic Curves(Cont.) Power Derating Curve 1.2 1 0.8 0.6 0.4 0 100 Ambient Temperature---TA(℃ ) BTB1412J3 CYStech Electronics Corp. 150 200 Spec. No. : C815J3 Issued Date : 2006.03.14 Revised Date :2006.03.20 Page No. : 4/7 CYStek Product Specification ...

Page 5

... Reel Dimension Carrier Tape Dimension BTB1412J3 CYStech Electronics Corp. Spec. No. : C815J3 Issued Date : 2006.03.14 Revised Date :2006.03.20 Page No. : 5/7 CYStek Product Specification ...

Page 6

... Average ramp-up rate(25 to 150℃) Preheat temperature 150~180℃ Temperature maintained above 220℃ Time within 5℃ of actual peak temperature Peak temperature range Ramp-down rate Time 25℃ to peak temperature BTB1412J3 CYStech Electronics Corp. Spec. No. : C815J3 Issued Date : 2006.03.14 Revised Date :2006.03.20 Page No. : 6/7 1~4 ℃/second 60~90 seconds 30 seconds min ...

Page 7

... All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1412J3 CYStech Electronics Corp ...

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