BTB1386LN3 Cystech Electonics Corp., BTB1386LN3 Datasheet
BTB1386LN3
Related parts for BTB1386LN3
BTB1386LN3 Summary of contents
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... E：Emitter Absolute Maximum Ratings Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Note : 1. Single Pulse Pw ≦ 350µs, Duty ≦ 2%. BTB1386LN3 CYStech Electronics Corp -4A / -0. Outline (Ta=25 C) Symbol V CBO V CEO ...
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... Characteristics (Ta=25 C) Symbol Min. BV -20 CBO BV -15 CEO BV -6 EBO I - CBO I - EBO *V - CE(sat) *h 120 Cob - Classification Rank Q Range 120~270 BTB1386LN3 CYStech Electronics Corp. Typ. Max. Unit - - -0.5 µA - -0.5 µ 560 - 120 - MHz 180~390 270~560 Spec. No. : C851N3 Issued Date : 2004.02.27 Revised Date : 2004 ...
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... Characteristic Curves Current Gain vs Collector Current 1000 100 100 Collector Current---IC(mA) Saturation Voltage vs Collector Current 10000 VBE(SAT) @ IC=10IB 1000 100 1 10 100 Collector Current---IC(mA) BTB1386LN3 CYStech Electronics Corp. 10000 VCE=5V 1000 100 VCE=2V 10 VCE=1V 1 1000 10000 250 200 150 100 50 0 ...
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... All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1386LN3 CYStech Electronics Corp ...