SUD50P04-40P Vishay, SUD50P04-40P Datasheet - Page 4

• Manufacturer Part Number: SUD50P04-40P
• Description: P-channel 40-v D-s Mosfet
• Manufacturer: Vishay

SUD50P04-40P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.3
100
120
0.7
0.5
0.3
0.1
96
72
48
24
10
0
0
- 50
1
0.0
0 .
0
1
- 25
Source-Drain Diode Forward Voltage
Single Pulse Power, Junction-to-Case
0.3
V
0.01
SD
T
0
J
- Source-to-Drain Voltage (V)
= 150 °C
T
Threshold Voltage
J
- Temperature (°C)
25
0.6
Time (s)
0.1
50
I
D
0.9
= 250 µA
75
T
J
100
= 25 °C
1
1.2
I
D
= 5 mA
125
New Product
150
1.5
1
0
0.12
0.09
0.06
0.03
0.01
120
100
0.1
96
72
48
24
10
0
0.01
0
1
0.001
0
Limited by r
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-to-Source Voltage
GS
> minimum V
0.01
V
2
Single Pulse
V
DS
0.1
T
GS
A
DS(on)
- Drain-to-Source Voltage (V)
= 25 °C
- Gate-to-Source Voltage (V)
*
0.1
4
GS
Time (s)
at which r
1
S-80109-Rev. B, 21-Jan-08
Document Number: 69731
6
1
DS(on)
10
T
I
T
A
D
is specified
A
= 125 °C
10
= 5 A
8
= 25 °C
1 ms
10 ms
100 ms
1 s
10 s
DC
100
100
10