SUD50P04-40P Vishay, SUD50P04-40P Datasheet - Page 5

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SUD50P04-40P

Manufacturer Part Number
SUD50P04-40P
Description
P-channel 40-v D-s Mosfet
Manufacturer
Vishay
Datasheet
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69731
S-80109-Rev. B, 21-Jan-08
0.01
22
18
13
100
35
28
21
14
0.1
10
9
4
0
7
0
0.01
1
0
0
Limited by r
* V
Safe Operating Area, Junction-to-Case
Current Derating*, Junction-to-Case
GS
Package Limited
Power Derating*, Junction-to-Case
25
25
> minimum V
V
Single Pulse
T
0.1
DS
C
DS(on)
T
T
50
= 25 °C
C
- Drain-to-Source Voltage (V)
C
- Case Temperature (°C)
50
- Case Temperature (°C)
*
75
GS
at which r
1
75
100
100
DS(on)
125
10
is specified
125
150
100 µs
1 ms
10 ms
100 ms
DC
100
150
175
New Product
* The power dissipation P
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
3.5
2.8
2.1
1.4
0.7
7
6
4
3
1
0
0
0
0
Current Derating*, Junction-to-Ambient
Power Derating*, Junction-to-Ambient
25
25
T
T
A
50
A
- Ambient Temperature (°C)
D
- Ambient Temperature (°C)
50
is based on T
75
SUD50P04-40P
75
100
Vishay Siliconix
100
J(max)
125
www.vishay.com
= 175 °C, using
125
150
150
175
5

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