QS6M3 ROHM Co. Ltd., QS6M3 Datasheet

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QS6M3

Manufacturer Part Number
QS6M3
Description
2.5v Drive Nch+pch Mosfet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistors
2.5V Drive Nch+Pch MOSFET
QS6M3
Silicon N-channel / P-channel MOSFET
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6).
Power switching, DC / DC converter.
∗ Mounted on a ceramic board
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
Channel to ambient
Type
QS6M3
Structure
Features
Packaging specifications
Thermal resistance
Application
Absolute maximum ratings (Ta=25°C)
Parameter
Parameter
Package
Code
Basic ordering unit (pieces)
Continuous
Pulsed
Continuous
Pulsed
Symbol
Taping
V
V
Tstg
Tch
3000
I
I
P
I
DSS
GSS
DP
I
SP
Rth (ch-a)
TR
D
S
D
Symbol
∗1
∗1
∗2
Tr1 : Nch
±1.5
±6.0
±12
0.8
6.0
30
−55 to +150
Limits
Limits
1.25
100
139
150
0.9
Tr2 : Pch
−0.75
±1.5
±6.0
−6.0
−20
±12
°C / W / ELEMENT
°C / W / TOTAL
Dimensions (Unit : mm)
TSMT6
W / TOTAL
W / ELEMENT
Unit
Unit
°C
°C
V
V
A
A
A
A
1pin mark
(6)
Abbreviated symbol : M03
0.95
(1)
(5)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Equivalent circuit
2.9
1.9
0.4
0.95
(2)
(4)
(6)
(1)
(3)
Each lead has same dimensions
∗2
∗1
1.0MAX
0.16
0.85
0.7
(5)
(2)
0 ~ 0.1
Rev.B
∗1
∗2
(4)
(3)
QS6M3
(1) Tr1 (Nch) Gate
(2) Tr2 (Pch) Source
(3) Tr2 (Pch) Gate
(4) Tr2 (Pch) Drain
(5) Tr1 (Nch) Source
(6) Tr1 (Nch) Drain
1/7

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QS6M3 Summary of contents

Page 1

... A S ∗1 −6.0 6.0 A ∗2 1. TOTAL D 0 ELEMENT °C 150 −55 to +150 °C Symbol Limits Unit ° TOTAL ∗ 100 ° ELEMENT 139 QS6M3 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) ( 0.1 (1) (2) (3) 1pin mark 0.16 0.4 Each lead has same dimensions Abbreviated symbol : M03 Equivalent circuit (6) (5) (4) ∗2 ∗ ...

Page 2

... R G ∗ − − 1 ∗ − − =4.5V 0 ∗ − − =1.5A 0 Min. Typ. Max. Unit ∗ − − =3.2A QS6M3 Conditions =0V DS =0V GS =0V GS =1mA D =4.5V GS =4.0V GS =2.5V GS =10V DS 15V DD =10Ω 15V R L =10Ω Conditions =0V GS Rev.B 2/7 ...

Page 3

... V DD ∗ − − = −4.5V 0 ∗ − − = −1.5A 0. Min. Typ. Max. Unit − − −1.2 = −0.75A QS6M3 Conditions =0V DS =0V GS =0V GS =1mA D = −4. −4. −2. −10V DS −15V DD −15V =10Ω =10Ω Conditions =0V GS Rev.B ...

Page 4

... Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Pulsed Ta=125°C 1 Ta=75°C Ta=25°C Ta= −25°C 0.1 10 0.01 0.1 1 DRAIN CURRENT : I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) QS6M3 6 Ta=25°C =15V =15V V DD =4.5V =1. =10Ω =10Ω Pulsed ...

Page 5

... Gate-Source Voltage 10000 V GS Pulsed Ta=125°C Ta=75°C 1000 Ta=25°C Ta= −25°C 100 10 10 0.1 1 DRAIN CURRENT : −I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) QS6M3 0.5 1 1.5 2 2.5 TOTAL GATE CHARGE : Qg (nC) Fig.3 Dynamic Input Characteristics 10 1 ...

Page 6

... GS D D.U. Fig.1-1 Switching Time Measurement Circuit G(Const.) D.U. Fig.2-1 Gate Charge Measurement Circuit QS6M3 Pulse Width 90% 50% 50% 10 10% 10% 90% 90 d(on) d(off off Fig.1-2 Switching Waveforms ...

Page 7

... GS D D.U. Fig.3-1 Switching Time Measurement Circuit G(Const.) D.U. Fig.4-1 Gate Charge Measurement Circuit QS6M3 Pulse Width V GS 10% 50% 50% 90% 10% 10% 90% 90 d(on) d(off off Fig.3-2 Switching Waveforms ...

Page 8

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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