QS6M3 ROHM Co. Ltd., QS6M3 Datasheet - Page 3

• Manufacturer Part Number: QS6M3
• Description: 2.5v Drive Nch+pch Mosfet
• Manufacturer: ROHM Co. Ltd.

Transistors
P-ch
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-Drain) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
I
C
V
I
DS (on)
C
C
Q
GS (th)
d (on)
d (off)
Q
GSS
Y
Q
DSS
t
t
oss
SD
iss
rss
r
f
gs
gd
fs
g
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min.
Min.
−0.7
−20
1.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
Typ.
0.85
155
170
310
270
3.0
0.8
40
35
10
12
45
20
−
−
−
−
−
−
Max.
Max.
−1.2
−2.0
±10
215
235
430
−1
−
−
−
−
−
−
−
−
−
−
−
−
Unit
Unit
mΩ
µA
µA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
V
S
I
V
I
V
V
I
I
I
I
V
V
f=1MHz
I
V
R
R
V
V
I
S
D
D
D
D
D
D
D
= −0.75A, V
GS
DS
DS
DS
GS
GS
DD
GS
= −1mA, V
= −1.5A, V
= −1.5A, V
= −0.75A, V
= −0.75A, V
= −0.75A, V
L
G
= −1.5A
=20Ω
=10Ω
= ±12V, V
= −20V, V
= −10V, I
= −10V
=0V
= −4.5V
= −4.5V
−15V
Conditions
Conditions
GS
GS
GS
D
GS
GS
GS
DS
DD
DS
=1mA
R
R
=0V
= −4.5V
= −4.0V
=0V
=0V
=0V
= −2.5V
= −10V
L
G
=10Ω
=10Ω
−15V
Rev.B
QS6M3
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