HAT1093C Renesas Electronics Corporation., HAT1093C Datasheet

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HAT1093C

Manufacturer Part Number
HAT1093C
Description
Silicon P Channel Mosfet Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HAT1093C-EL-E
Quantity:
1 850
HAT1093C
Silicon P Channel MOSFET
Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body - Drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Rev.5.00 Jan 26, 2006 page 1 of 6
Low on-resistance
R
Low drive current.
1.8 V gate drive devices.
High density mounting
DS(on)
2. When using the glass epoxy board. (FR4 40
= 41 m typ. (at V
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
10 s, duty cycle
Item
GS
Indexband
= –4.5 V)
1%
6
5
4
1
2
I
D
3
(pulse)
Symbol
Pch
V
V
Tstg
Tch
I
40
GSS
I
DSS
DR
Note 2
D
Note1
1.6mm), Ta = 25 C
G
6
D
2
D
3
D
4
–55 to +150
Ratings
D
S
5
1
–12
–12
900
150
–3
–3
8
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
REJ03G1230-0500
Jan 26, 2006
Unit
mW
(Ta = 25°C)
V
V
A
A
A
C
C
Rev.5.00

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HAT1093C Summary of contents

Page 1

... HAT1093C Silicon P Channel MOSFET Power Switching Features Low on-resistance typ. ( –4.5 V) DS(on) GS Low drive current. 1.8 V gate drive devices. High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage ...

Page 2

... HAT1093C Electrical Characteristics Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge ...

Page 3

... HAT1093C Main Characteristics Power vs. Temperature Derating 1.6 Test Condition : When using the glass epoxy board (FR4 1.6 mm 25°C 1.2 0.8 0 100 Ambient Temperature Typical Output Characteristics 20 16 –10 V – –2 –2 –4 Drain to Source Voltage V Drain to Source Saturation Voltage vs. ...

Page 4

... HAT1093C Static Drain to Source on State Resistance vs. Temperature 200 160 120 –1.5, –1 A –1 –4 – Case Temperature Dynamic Input Characteristics – –10 V –12 V –10 –20 – – – Gate Charge Qg (nc) Reverse Drain Current vs. ...

Page 5

... HAT1093C Switching Time Test Circuit Vin Monitor D.U.T. 4.7 Ω Vin –4.5 V Rev.5.00 Jan 26, 2006 page Vin Vout Monitor –10 V Vout t d(on) Waveform 10% 90% 90% 90% 10% 10 d(off ...

Page 6

... A-A Section Ordering Information Part Name HAT1093C-EL-E 3000 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Jan 26, 2006 page RENESAS Code Previous Code MASS[Typ.] ...

Page 7

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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