HAT1093C Renesas Electronics Corporation., HAT1093C Datasheet - Page 2

• Manufacturer Part Number: HAT1093C
• Description: Silicon P Channel Mosfet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT1093C
Electrical Characteristics
Drain to Source breakdown voltage
Gate to Source breakdown voltage
Gate to Source leakage current
Drain to Source leakage current
Gate to Source cutoff voltage
Drain to Source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to Source charge
Gate to Drain charge
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Body - Drain diode forward voltage
Note:
Rev.5.00 Jan 26, 2006 page 2 of 6
3. Pulse test
Item
Symbol
V
V
R
V
Coss
(BR)DSS
(BR)GSS
Crss
Ciss
Qgd
Qgs
t
t
I
I
|y
V
DS(on)
GS(th)
Qg
d(on)
d(off)
GSS
DSS
t
t
DF
fs
r
f
|
–0.3
Min
–12
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4
8
–0.8
Typ
940
200
130
6.5
1.5
3.5
41
54
85
11
18
23
50
28
—
—
—
—
—
Max
–1.2
–1.1
128
–1
54
76
—
—
—
—
—
—
—
—
—
—
—
—
—
10
Unit
m
m
m
pF
pF
nC
nC
nC
pF
ns
ns
ns
ns
V
V
V
S
V
A
A
I
I
V
V
I
I
I
I
I
V
f = 1 MHz
V
I
V
I
R
I
D
G
D
D
D
D
D
D
D
F
GS
DS
DS
DS
DS
g
= –3 A, V
= –10 mA, V
= –1 mA, V
= –1.5 A, V
= –1.5 A, V
= –1.5 A, V
= –1.5 A, V
= –3 A
= –1.5 A, R
= 100 A, V
= 4.7
= 6.4V, V
=-12 V, V
= –10 V, V
= –10 V, V
= –10 V, V
Test Conditions
GS
DS
GS
GS
GS
DS
GS
L
= 0
GS
DS
GS
GS
GS
= 6.7 ,
DS
= –10 V
= –10 V
= –4.5 V
= –2.5 V
= –1.8 V
= 0
= 0
= 0
= 0,
= –4.5 V,
= –4.5 V,
= 0
(Ta = 25°C)
Note3
Note3
Note3
Note3
Note3