NDH854P Fairchild Semiconductor, NDH854P Datasheet - Page 2

• Manufacturer Part Number: NDH854P
• Description: P-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DSS
GSSF
GSSR
D(on)
D(on)
r
D(off)
f
FS
GS(th)
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 2)
(Note 2)
(T
A
= 25°C unless otherwise noted)
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
V
V
I
f = 1.0 MHz
D
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GEN
DS
= -5.1 A, V
= 0 V, I
= -24 V, V
= 20 V, V
= -20 V, V
= V
= -10 V, I
= -4.5 V, I
= -10 V, V
= -4.5 V, V
= - 10 V, I
= -15 V, V
= -10 V, I
= -10 V,
= -10 V, R
GS
, I
D
D
= -250 µA
D
DS
= -250 µA
GS
D
D
GS
GS
DS
DS
D
DS
GEN
= -5.1 A
= -5.1 A
= -1 A,
= 0 V
= 0 V
= -4.7 A
= -10 V
= 0 V
= -5 V
= 0 V,
= -5 V
= 6
T
T
T
J
J
J
= 55
= 125
= 125
o
C
o
o
C
C
Min
-0.8
-30
-15
-1
-5
0.026
0.038
0.044
1220
Typ
-1.4
-1.1
735
290
12
15
16
72
48
39
4
8
0.032
0.057
0.052
Max
-100
100
-1.6
140
-10
30
30
95
55
-1
-2
NDH854P Rev.D
Units
µA
µA
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
A
S