NDH854P Fairchild Semiconductor, NDH854P Datasheet - Page 5

• Manufacturer Part Number: NDH854P
• Description: P-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Typical Electrical Characteristics
V
GS
4 0 0 0
3 0 0 0
2 0 0 0
1 0 0 0
Figure 7. Breakdown Voltage Variation with
1.08
1.06
1.04
1.02
0.98
0.96
0.94
5 0 0
3 0 0
2 0 0
Figure 9. Capacitance Characteristics.
Figure 11. Switching Test Circuit
1
0 .1
-50
I
D
Temperature.
R
= -250µA
f = 1 MHz
V
GS
0 .2
GEN
-25
= 0 V
-V
DS
T , JUNCTION TEMPERATURE (°C)
0
V
J
0 .5
, DRAIN TO SOURCE VOLTAGE (V)
IN
G
2 5
1
5 0
-V
D
S
2
DD
7 5
R
L
.
5
D U T
1 0 0
1 0
C rss
C oss
C iss
1 2 5
V
O U T
2 0
1 5 0
3 0
V
t
V
OUT
d(on)
IN
0 .0 0 0 1
0 .0 0 1
1 0
1 0 %
0 .0 1
Figure 8. Body Diode Forward Voltage
8
6
4
2
0
0 .1
Figure 10. Gate Charge Characteristics.
2 0
1 0
Variation with Current and Temperature
0
1
0
Figure 12. Switching Waveforms.
I
D
V
= -5.1A
GS
t
5 0 %
o n
= 0V
1 0 %
0 .2
-V
SD
1 0
, BODY DIODE FORWARD VOLTAGE (V)
t
9 0 %
PULSE WIDTH
r
0 .4
Q
g
T = 125°C
J
, GATE CHARGE (nC)
t
0.6
d(off)
2 0
25°C
5 0 %
V
-55°C
0 .8
DS
= -5V
9 0 %
t
1 0 %
3 0
off
-10V
9 0 %
1
-15V
NDH854P Rev.D
.
INVERTED
t
f
1 .2
4 0