US5U29 ROHM Co. Ltd., US5U29 Datasheet

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US5U29

Manufacturer Part Number
US5U29
Description
Small Switching -20v, -1.5a
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistor
Small switching (–20V, –1.5A)
US5U29
1) The US5U29 conbines Pch MOSFET with a
2) Pch MOSFET have a low on-state resistance
3) Pch MOSFET is reacted a low voltage drive(2.5V)
4) The Independently connected Schottky barrier diode
Load switch, DC/DC conversion
Silicon P-channel MOSFET
Schottky Barrier DIODE
< Di >
< MOSFET AND Di >
< MOSFET >
Type
US5U29
Drain−source voltage
Gate−source voltage
Drain current
Source current
(Body diode)
Channel temperature
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Total power dissipation
Range of storage temperature
Features
Applications
Structure
Packaging specifications
Absolute maximum ratings (Ta=25GC)
Schottky barrier diode in a single TUMT5 package.
with a fast switching.
have a low forward voltate.
Parameter
Package
Code
Basic ordering unit (pieces)
Continuous
Pulsed
Continuous
Pulsed
Symbol
Taping
V
V
Tstg
Tch
V
I
3000
I
I
V
FSM
P
Tj
DSS
GSS
I
DP
I
I
SP
TR
RM
D
S
F
R
D
−55 to 150
Limits
−0.4
−20
±12
150
150
0.7
3.0
1.0
±1
±4
−4
25
20
V
V
A
A
A
A
V
V
A
A
C
C
C
PW 10µs DUTY CYCLE 1%
PW 10µs DUTY CYCLE 1%
W/TOTAL/MOUNTED ON
External dimensions (Unit : mm)
∗1 ESD protection diode
∗2 Body diode
Equivalent circuit
Unit
A CERAMIC BOARD
60HZ / 1CYC.
(5)
(1)
Abbreviated symbol : U29
0.2
∗1
(4)
(5)
(2)
2.1
1.7
∗2
(2)
Each lead has same dimensions
(3)
(1)
0.15Max.
0.2
(4)
(3)
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
Rev.A
US5U29
1/4

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US5U29 Summary of contents

Page 1

... Transistor Small switching (–20V, –1.5A) US5U29 Features 1) The US5U29 conbines Pch MOSFET with a Schottky barrier diode in a single TUMT5 package. 2) Pch MOSFET have a low on-state resistance with a fast switching. 3) Pch MOSFET is reacted a low voltage drive(2.5V) 4) The Independently connected Schottky barrier diode have a low forward voltate ...

Page 2

... I =− =15Ω L − 0.5 − =10Ω G Min. Typ. Max. Unit Conditions − − −1 =−0.4A Min. Typ. Max. Conditions Unit 0. =0.7A − − F 200 V =20V − − µA R US5U29 =0V DS =0V =0V GS =−1mA =−2.5V =−0.5A =0V Rev.A 2/4 ...

Page 3

... V =0V GS Ciss 100 Crss Coss 10 0.01 0 100 Drain−Source Voltage : −V [V] DS Fig.8 Typical Capactitance vs.Drain−Source Voltage US5U29 10000 V =−4V GS Pulsed 1000 Ta=125°C 75°C 25°C −25°C 100 0.01 0 Drain Current : −I [A] D Fig.3 Static Drain−Source On−State ( Ι ...

Page 4

... Ta=125 −25 C 100 10 1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 Forward Voltage :V [V] F Fig.11 Forward Temperature Characteristics V GS 10% 50 d(on US5U29 100 125 0 0.01 −25 C 0.001 0.0001 Reverse Voltage : V [V] R Fig.12 Reverse Temperature Characteristics Pulse Width 50% 90% 10% 10% 90% 90 ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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