FQD3N60C Fairchild Semiconductor, FQD3N60C Datasheet

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FQD3N60C

Manufacturer Part Number
FQD3N60C
Description
600v N-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet

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©2006 Fairchild Semiconductor Corporation
FQD3N60C / FQU3N60C Rev. A1
FQD3N60C / FQU3N60C
600V N-Channel MOSFET
Features
• 2.4A, 600V, R
• Low gate charge ( typical 10.5nC)
• Low Crss ( typical 5pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
θJC
θJA*
θJA
, T
Symbol
Symbol
STG
G
DS(on)
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
S
= 3.4 Ω @V
D-PAK
FQD Series
D
GS
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
= 10 V
C
= 25°C)
Parameter
Parameter
G
C
C
= 25°C)
= 100°C)
D
S
1
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, electronic lamp ballasts
based on half bridge topology.
I-PAK
FQU Series
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQD3N60C / FQU3N60C
FQD3N60C / FQU3N60C
G
-55 to +150
± 30
600
150
300
2.4
1.5
9.6
2.4
5.0
4.5
0.4
50
110
2.5
50
S
QFET
D
August 2006
www.fairchildsemi.com
Units
Units
W/°C
V/ns
°C/W
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
®

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FQD3N60C Summary of contents

Page 1

... R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2006 Fairchild Semiconductor Corporation FQD3N60C / FQU3N60C Rev. A1 Description = 10 V These N-Channel enhancement mode power field effect transis- GS tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology ...

Page 2

... DD G ≤ 3A, di/dt ≤ 200A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature FQD3N60C / FQU3N60C Rev. A1 Package Reel Size D-PAK 380mm D-PAK 380mm I-PAK - T = 25°C unless otherwise noted ...

Page 3

... C 600 oss 500 C iss 400 300 C 200 rss 100 Drain-Source Voltage [V] DS FQD3N60C / FQU3N60C Rev. A1 Figure 2. Transfer Characteristics 1 10 ※ Notes : 1. 250µ s Pulse Test ℃ Figure 4. Body Diode Forward Voltage ...

Page 4

... 150 Single Pulse - Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FQD3N60C / FQU3N60C Rev. A1 (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 ♦ Notes : 250 µ 0.5 0.0 100 150 200 -100 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FQD3N60C / FQU3N60C Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FQD3N60C / FQU3N60C Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FQD3N60C / FQU3N60C Rev. A1 D-PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Package Dimensions FQD3N60C / FQU3N60C Rev. A1 (Continued) I-PAK 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FQD3N60C / FQU3N60C Rev. A1 OCX™ OCXPro™ ® OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ ...

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