FQD3N60C Fairchild Semiconductor, FQD3N60C Datasheet - Page 2

• Manufacturer Part Number: FQD3N60C
• Description: 600v N-channel Mosfet
• Manufacturer: Fairchild Semiconductor

FQD3N60C / FQU3N60C Rev. A1
Package Marking and Ordering Information
Electrical Characteristics
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 47mH, I
3. I
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Off Characteristics
BV
∆BV
∆T
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
J
DSS
≤ 3A, di/dt ≤ 200A/µs, V
DSS
FQD3N60C
FQD3N60C
FQU3N60C
/
AS
= 2.4A, V
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
DD
= 50V, R
DD
≤ BV
FQD3N60CTM
FQU3N60CTU
FQD3N60CTF
DSS,
G
Parameter
= 25 Ω, Starting T
Device
Starting T
J
= 25°C
T
C
J
= 25°C unless otherwise noted
= 25°C
Package
D-PAK
D-PAK
I-PAK
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 µA, Referenced to 25°C
= 25 Ω
/ dt = 100 A/µs
= 600 V, V
= 480 V, T
= V
= 40 V, I
= 25 V, V
= 480 V, I
= 0 V, I
= 30 V, V
= -30 V, V
= 10 V, I
= 300 V, I
= 10 V
= 0 V, I
= 0 V, I
2
Test Conditions
GS
, I
D
S
S
Reel Size
D
D
D
= 2.4 A
= 3 A,
= 250 µA
DS
GS
D
D
= 250 µA
DS
= 1.2 A
380mm
380mm
GS
C
= 1.2 A
= 3A,
= 3A,
= 125°C
= 0 V
= 0 V,
= 0 V
-
= 0 V
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Tape Width
16mm
16mm
Min
600
2.0
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Typ
10.5
435
260
0.6
2.8
3.5
2.1
4.5
1.6
45
12
30
35
35
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5
Max Units
Quantity
-100
100
565
4.0
3.4
1.4
www.fairchildsemi.com
12
10
60
34
70
80
80
14
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1
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8
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3
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2500
2000
75
V/°C
µA
µA
nA
nA
pF
nC
nC
nC
µC
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
A
A
V