SFM9110 Fairchild Semiconductor, SFM9110 Datasheet

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SFM9110

Manufacturer Part Number
SFM9110
Description
Advanced Power Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
Advanced Power MOSFET
*
FEATURES
 Avalanche Rugged Technology
 Rugged Gate Oxide Technology
 Lower Input Capacitance
 Improved Gate Charge
 Extended Safe Operating Area
 Lower Leakage Current : 10 A (Max.) @ V
 Lower R
Absolute Maximum Ratings
Thermal Resistance
When mounted on the minimum pad size recommended (PCB Mount).
T
Symbol
Symbol
J
dv/dt
R
V
V
E
E
, T
I
I
P
T
I
DM
DSS
AR
D
GS
AS
AR
L
JA
D
STG
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
: 0.912
Junction-to-Ambient
(Typ.)
Characteristic
Characteristic
*
A
=25
A
A
=25
=70
*
o
C)
DS
o
o
C)
C)
*
= -100V
O
O
O
O
O
2
1
1
1
3
Typ.
--
- 55 to +150
-100
0.25
2.52
0.02
Value
-1.0
-0.7
-8.0
-1.0
-6.5
300
53
BV
R
I
30
1. Gate 2. Drain 3. Source
D
SOT-223
DS(on)
SFM9110
DSS
= -1.0 A
Max.
1
50
= 1.2
= -100 V
3
2
Units
Units
o
W/
V/ns
C/W
mJ
mJ
o
Rev. B
W
V
A
A
V
A
C
o
C

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SFM9110 Summary of contents

Page 1

... I D SOT-223 = -100V DS 1. Gate 2. Drain 3. Source Value -100 o = = = +150 300 Typ SFM9110 = -100 V DSS = 1.2 DS(on Units V/ Max. Units o 50 C/W Rev. B ...

Page 2

... SFM9110 Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...

Page 3

... Fig 6. Gate Charge vs. Gate-Source Voltage = SFM9110 @ Gate-Source Voltage [V] ...

Page 4

... SFM9110 Fig 7. Breakdown Voltage vs. Temperature Junction Temperature [ J Fig 9. Max. Safe Operating Area ...

Page 5

... DUT R 2 Current Sampling ( Resistor d(on 0.5 rated 10% 90% V out DSS SFM9110 Charge off d(off DSS ---- 2 -------------------- DSS DD Time ( (t) ...

Page 6

... SFM9110 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT Driver Driver ) DUT ) DUT ) + Compliment of DUT (N-Channel) • dv/dt controlled by “R ” G • I controlled by Duty Factor “D” S Gate Pulse Width -------------------------- D = Gate Pulse Period ...

Page 7

... TM 2 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS ...

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