SFM9110 Fairchild Semiconductor, SFM9110 Datasheet - Page 4

• Manufacturer Part Number: SFM9110
• Description: Advanced Power Mosfet
• Manufacturer: Fairchild Semiconductor

SFM9110
1 0
1 0
1 . 2
1 . 1
1 . 0
0 . 9
0 . 8
1 0
1 0
1 0
-1
-2
2
1
0
- 7 5
Fig 7. Breakdown Voltage vs. Temperature
@ N o t e s :
- 5 0
1 . T
2 . T
3 . S i n g l e P u l s e
1 0
0
O p e r a t i o n i n T h i s A r e a
i s L i m i t e d b y R
C
J
Fig 9. Max. Safe Operating Area
= 2 5
= 1 5 0
- 2 5
-V
T
J
o
DS
C
o
, Junction Temperature [
C
, Drain-Source Voltage [V]
0
10
10
10
DS(on)
2
1
0
10
2 5
- 5
0.01
0.05
0.02
D=0.5
0.1
0.2
D C
1 0
5 0
1
1 0 m s
7 5
1 m s
10
t
0 . 1 m s
1
- 4
single pulse
1 0 0
@ N o t e s :
, Square Wave Pulse Duration
1 . V
2 . I
0 . 0 1 m s
o
C]
GS
D
1 2 5
= - 2 5 0 A
= 0 V
Fig 11. Thermal Response
1 0
10
1 5 0
2
- 3
1 7 5
10
- 2
2 . 5
2 . 0
1 . 5
1 . 0
0 . 5
0 . 0
1 . 2
0 . 9
0 . 6
0 . 3
0 . 0
Fig 10. Max. Drain Current vs. Case Temperature
- 7 5
2 5
@ Notes :
P
- 5 0
.
DM
10
1. Z
2. Duty Factor, D=t
3. T
Fig 8. On-Resistance vs. Temperature
- 1
J M
- 2 5
5 0
J C
T
-T
J
(t)=50
t
T
1.
C
, Junction Temperature [
c
t
[sec]
=P
0
2.
, Case Temperature [
D M
10
*Z
o
2 5
7 5
0
C/W Max.
J C
(t)
1
5 0
/t
POWER MOSFET
2
1 0 0
7 5
P-CHANNEL
10
1
1 0 0
@ N o t e s :
o
C]
1 . V
2 . I
o
C]
1 2 5
1 2 5
GS
D
= - 1 . 8 A
= - 1 0 V
1 5 0
1 7 5
1 5 0