BF989 NXP Semiconductors, BF989 Datasheet - Page 3

• Manufacturer Part Number: BF989
• Description: N-channel Dual-gate Mos-fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LIMITING VALUES
In according with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and the Thermal characteristics
1. Device mounted on a ceramic substrate of 8
April 1991
handbook, halfpage
V
I
I
I
I
P
T
T
R
SYMBOL
SYMBOL
D
D(AV)
G1-S
G2-S
stg
j
DS
tot
N-channel dual-gate MOS-FET
th j-a
(mW)
P tot
200
100
0
0
drain-source voltage
drain current (DC)
average drain current
gate 1-source current
gate 2-source current
total power dissipation
storage temperature range
junction temperature
thermal resistance from junction to ambient
Fig.2 Power derating curve.
PARAMETER
PARAMETER
100
T amb ( C)
MGE792
200
10
up to T
0.7 mm.
in free air; note 1
3
amb
CONDITIONS
= 60 C; note 1
CONDITIONS
65
MIN.
VALUE
460
Product specification
20
20
20
200
+150
150
10
10
MAX.
BF989
UNIT
K/W
V
mA
mA
mA
mA
mW
C
C
UNIT