BF989 NXP Semiconductors, BF989 Datasheet - Page 4

• Manufacturer Part Number: BF989
• Description: N-channel Dual-gate Mos-fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): I
April 1991
I
I
I
V
V
V
V
C
C
C
C
F
SYMBOL
SYMBOL
j
G1-SS
G2-SS
DSS
Y
= 25 C unless otherwise specified.
(BR)G1-SS
(BR)G2-SS
(P)G1-S
(P)G2-S
N-channel dual-gate MOS-FET
ig1-s
ig2-s
rs
os
fs
gate 1 cut-off current
gate 2 cut-off current
drain-source cut-off voltage
gate 1-source breakdown voltage
gate 2-source breakdown voltage
gate 1-source cut-off voltage
gate 2-source cut-off voltage
transfer admittance
input capacitance at gate 1
input capacitance at gate 2
feedback capacitance
output capacitance
noise figure
PARAMETER
PARAMETER
D
= 7 mA; V
V
V
V
I
I
I
I
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 200 MHz; G
f = 800 MHz; G
G1-SS
G2-SS
D
D
G1-S
G2-S
DS
DS
= 20 A; V
= 20 A; V
= 10 V; V
= 10 V; V
= 5 V; V
= 5 V; V
= 10 mA; V
= 10 mA; V
4
CONDITIONS
CONDITIONS
DS
DS
G1-S
G2-S
S
S
G2-S
G1-S
= 10 V; V
= 10 V; V
= 2 mS; B
= 2 mS; B
= 0; V
= 4 V; T
G2-S
G1-S
= V
= V
DS
DS
= V
= V
G2-S
G2-S
G1-S
= 0
= 0
amb
DS
DS
S
S
= B
= B
= 4 V
= 0
= 0
= 4 V
= 0
= 25 C.
Sopt
Sopt
2
9.5
6
6
MIN.
MIN.
Product specification
20
12
1.8
1
25
0.9
1.6
2.8
MAX.
50
50
20
20
2.7
2.7
TYP.
BF989
nA
nA
mA
V
V
V
V
mS
pF
pF
fF
pF
dB
dB
UNIT
UNIT