NE3511S02 Renesas Electronics Corporation., NE3511S02 Datasheet - Page 2

• Manufacturer Part Number: NE3511S02
• Description: X To Ku Band Super Low Noise Amplifier N-channel Hj-fet
• Manufacturer: Renesas Electronics Corporation.

RECOMMENDED OPERATING CONDITIONS (T
ELECTRICAL CHARACTERISTICS (T
2
Drain to Source Voltage
Drain Current
Input Power
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
Parameter
Parameter
Symbol
Symbol
V
I
I
V
GS (off)
NF
P
GSO
G
DSS
g
I
DS
D
m
in
a
A
V
V
V
V
V
Data Sheet PG10642EJ01V0DS
= +25°C, unless otherwise specified)
GS
DS
DS
DS
DS
MIN.
1
5
−
= 2 V, V
= 2 V, I
= 2 V, I
= 2 V, I
= −3 V
D
D
D
Test Conditions
TYP.
GS
A
= 100
= 10 mA
= 10 mA, f = 12 GHz
10
−
2
= +25°C)
= 0 V
μ
A
MAX.
20
3
0
dBm
Unit
mA
V
MIN.
−0.2
12.5
20
50
−
−
TYP.
−0.7
0.30
13.5
0.5
40
65
MAX.
−1.7
0.45
10
70
NE3511S02
−
−
Unit
mA
mS
μ
dB
dB
V
A