NE3511S02 Renesas Electronics Corporation., NE3511S02 Datasheet - Page 3

• Manufacturer Part Number: NE3511S02
• Description: X To Ku Band Super Low Noise Amplifier N-channel Hj-fet
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
250
200
150
100
Remark The graphs indicate nominal characteristics.
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
80
60
40
20
–2.0
0
0
MINIMUM NOISE FIGURE,
0
ASSOCIATED GAIN vs. FREQUENCY
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
2
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Gate to Source Voltage V
50
Ambient Temperature T
4
6
Frequency f (GHz)
Mounted on Glass Epoxy PCB
(1.08 cm
100
8
G
NF
a
–1.0
10
min
2
150
× 1.0 mm (t) )
12
14
A
GS
(˚C)
V
I
V
D
200
(V)
A
DS
16
DS
= 10 mA
= +25°C, unless otherwise specified)
= 2 V
= 2 V
18
Data Sheet PG10642EJ01V0DS
250
20
0
25
20
15
10
5
0
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
MINIMUM NOISE FIGURE,
80
60
40
20
ASSOCIATED GAIN vs. DRAIN CURRENT
0
0
f = 12 GHz
V
DS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
= 2 V
Drain to Source Voltage V
5
Drain Current I
10
NF
1.0
G
min
a
15
D
(mA)
DS
V
(V)
20
GS
NE3511S02
–0.2 V
–0.4 V
–0.6 V
= 0 V
2.0
25
16
14
12
10
8
6
4
2
0
3