3SK0219 Panasonic Corporation of North America, 3SK0219 Datasheet
3SK0219
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3SK0219 Summary of contents
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High Frequency FETs 3SK219 Silicon N-Channel 4-pin MOS FET For VHF amplification Features Low noise-figure (NF) Large power gain PG Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. Absolute Maximum Ratings Parameter Symbol Drain ...
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High Frequency FETs 200 175 150 125 100 100 120 140 160 Ambient temperature Ta ( ˚ G2S 48 V =10V DS Ta=25˚C 40 ...
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High Frequency FETs PG V G2S 60 V =8V DS f=200MHz Ta=25˚ –20 –40 –60 – Gate 2 to source voltage V G2S G1S 24 ...
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Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...