3SK0219 Panasonic Corporation of North America, 3SK0219 Datasheet - Page 2

• Manufacturer Part Number: 3SK0219
• Description: Silicon N-channel 4-pin Mos Fet
• Manufacturer: Panasonic Corporation of North America

High Frequency FETs
2
200
175
150
125
100
75
50
25
48
40
32
24
16
6
5
4
3
2
1
0
0
8
0
Gate 2 to source voltage V
0.1
–2
0
Drain to source voltage V
Ambient temperature Ta ( ˚C )
V
20
G1S
0.3
0
=4V
C
40
iss
I
2
1
, C
P
D
3V
60
2V
D
oss
80
3
4
V
1V
0V
Ta
G2S
100
V
f=1MHz
Ta=25˚C
G1S
10
V
6
C
C
=V
120
DS
iss
oss
V
Ta=25˚C
G2S
DS
30
DS
G2S
8
140
=–5V
=10V
( V )
160
100
( V )
10
–10
–20
36
30
24
18
12
40
30
20
10
36
30
24
18
12
6
0
0
6
0
Gate 1 to source voltage V
Gate 1 to source voltage V
–1
–2
0
Drain to source voltage V
–1
0
2
| Y
0V
PG
I
1
0
4
D
fs
|
1V
2
1
6
V
V
V
V
f=190 ~ 210MHz
Ta=25˚C
DS
G1S
DS
G1S
=8V
3
2
8
V
3V
2V
G2S
V
G1S
V
f=1kHz
Ta=25˚C
V
V
Ta=25˚C
=4V
DS
DS
G1S
G2S
G1S
10
G2S
4
3
=1.2V
0.9V
0.6V
0.3V
0V
4V
3V
2V
1V
=10V
=5V
=4V
( V )
( V )
( V )
12
5
4
48
40
32
24
16
36
30
24
18
12
12
10
8
0
Gate 1 to source voltage V
6
0
8
6
4
2
0
Gate 1 to source voltage V
–2
–2
0
10
–1
Drain current I
0
NF
I
3V
| Y
20
2
0
D
fs
|
30
4
1
V
2V
1V
0V
V
V
V
f=190 ~ 210MHz
Ta=25˚C
G2S
G1S
DS
G1S
I
D
=1V
D
40
=8V
6
3SK219
2
2V
( mA )
V
Ta=25˚C
3V
4V
V
V
f=1kHz
Ta=25˚C
DS
G1S
DS
G2S
50
G1S
8
3
=10V
=10V
=4V
( V )
( V )
10
60
4