3SK317 Renesas Electronics Corporation., 3SK317 Datasheet

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... Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier Features Low noise characteristics; (NF = 1.0 dB typ 200 MHz) High power gain characteristics; (PG = 27.6 dB typ 200 MHz) Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) Note: Marking is “ZR-“. Rev.2.00 ...

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... Absolute Maximum Ratings Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Electrical Characteristics Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current ...

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... Main Characteristics Maximum Channel Power Dissipation Curve 200 150 100 100 Ambient Temperature Ta Drain Current vs. Gate1 to Source Voltage 20 3.0 V 2 0.5 V G2S Gate1 to Source Voltage Forward Transfer Admittance vs. Gate1 to Source Voltage kHz ...

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... Noise Figure vs. Drain Current Drain Current I Noise Figure vs. Drain to Source Voltage Drain to Source Voltage V Noise Figure vs. Drain Current Drain Current I Rev.2.00 Aug 10, 2005, page ...

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... Noise Figure vs. Drain to Source Voltage Drain to Source Voltage V Noise Figure vs. Drain to Source Voltage Drain to Source Voltage V Rev.2.00 Aug 10, 2005, page G2S 900 MHz ( G2S ...

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... A-A Section B-B Section Ordering Information Part Name 3SK317ZR-TL-E 3000 Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005, page Package Name MASS[Typ.] CMPAK-4(T) / CMPAK-4(T)V ...

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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...