3SK317 Renesas Electronics Corporation., 3SK317 Datasheet - Page 2

• Manufacturer Part Number: 3SK317
• Description: Mosfets Silicon N-channel Dual Gate Mos Fet Uhf / Vhf Rf Amplifier
• Manufacturer: Renesas Electronics Corporation.

3SK317
Absolute Maximum Ratings
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Electrical Characteristics
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Power gain
Noise figure
Noise figure
Rev.2.00
Aug 10, 2005,
Item
Item
page 2 of 6
V
V
Symbol
V
V
V
(BR)G1SS
(BR)G2SS
I
Coss
(BR)DSS
Crss
I
I
Ciss
G1S(off)
G2S(off)
DS(op)
G1SS
G2SS
|y
PG
PG
NF
NF
NF
fs
|
Symbol
Min
2.4
0.8
14
20
24
12
V
V
Tstg
—
—
—
—
—
—
Pch
Tch
V
0
0
4
8
8
G1S
G2S
I
DS
D
0.021
27.6
15.6
Typ
0.2
0.3
3.1
1.1
1.0
2.7
25
—
—
—
—
—
8
3
Max
0.04
3.5
1.4
1.5
3.5
100
100
14
—
—
—
—
—
—
1
1
4
–55 to +150
Ratings
100
150
14
±8
±8
25
Unit
mA
mS
nA
nA
dB
dB
dB
dB
dB
pF
pF
pF
V
V
V
V
V
I
I
I
V
V
V
I
V
I
V
V
V
I
V
I
V
I
V
I
V
I
D
G1
G2
D
D
D
D
D
D
D
G1S
G2S
DS
DS
DS
G2S
DS
DS
DS
DS
DS
= 200 A , V
= 100 A
= 100 A
= 10 mA, f = 1 kHz
= 10 mA, f = 1 MHz
= 10 mA , f = 200 MHz
= 10 mA, f = 900 MHz
= 10 mA, f = 60 MHz
= 10 A, V
= 10 A, V
= 10 V, V
= 10 V, V
= 6 V, V
= 6 V, V
= 6 V, V
= 6 V, V
= 6 V, V
= 6 V, V
= 6 V, V
= 6 V, V
= 3 V
Test Conditions
G1S
G2S
G2S
G2S
G2S
G2S
G2S
G1S
G2S
G1S
G1S
G2S
G1S
= 0.75 V,
= 3 V
= 3 V,
= 3 V,
= 3 V,
= 3 V
= 3 V,
= 3 V,
Unit
= V
= V
mW
mA
= V
= V
= V
°
°
V
V
V
C
C
(Ta = 25 C)
(Ta = 25 C)
DS
DS
G2S
DS
DS
= 0
= 0
= 0
= 0
= –3 V