NE24283B Renesas Electronics Corporation., NE24283B Datasheet

NE24283B

Manufacturer Part Number

NE24283B

Description

Ultra Low Noise Pseudomorphic Hj Fet Space Qualified

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.NE24283B.pdf (4 pages)

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FEATURES

• VERY LOW NOISE FIGURE:

• HIGH ASSOCIATED GAIN:

• GATE LENGTH: 0.25 m

• GATE WIDTH: 200 m

• HERMETIC METAL/CERAMIC PACKAGE

DESCRIPTION

The NE24283B is a pseudomorphic Hetero-Junction FET that

uses the junction between Si-doped AlGaAs and undoped

InGaAs to create very high mobility electrons. The device

features mushroom shaped TiAl gates for decreased gate

resistance and improved power handling capabilities. The

mushroom gate also results in lower noise figure and high

associated gain. This device is housed in a solder sealed

hermetic, metal ceramic package for high reliability in space

applications.

NEC's stringent quality assurance and test procedures as-

sure the highest reliability and performance.

ELECTRICAL CHARACTERISTICS

Note:

1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually

SYMBOLS

0.6 dB TYP at 12 GHz

11.0 dB TYP at 12 GHz

measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established of the production

line as a "go-no-go" screening tuned for the "generic" type but not for each specimen.

TH (CH-A)

TH (CH-C)

GSO

DSS

OPT 1

1dB

A 1

Optimum Noise Figure at V

f = 4 GHz

f = 12 GHz

Associated Gain at V

f = 4 GHz

f = 12 GHz

Output Power at 1 dB Gain Compression Point, f = 12 GHz

Gain at P

Saturated Drain Current at V

Pinch-off Voltage at V

Transconductance at V

Gate to Source Leakage Current at V

Thermal Resistance (Channel-to-Ambient)

Thermal Resistance (Channel-to-Case)

= 2 V, I

1dB

, f = 12 GHz

PARAMETERS AND CONDITIONS

= 10 mA

= 20 mA

= 10 mA

= 20 mA

PACKAGE OUTLINE

PART NUMBER

= 2 V, I

PSEUDOMORPHIC HJ FET

= 2 V, I

= 2 V, V

= 10 mA

= 100 A

= 10 mA

= -3 V

= 25 C)

= 0 V

(SPACE QUALIFIED)

ULTRA LOW NOISE

UNITS

1.4

1.2

0.8

0.2

0.6

0.4

dBm

C/W

California Eastern Laboratories

NOISE FIGURE & ASSOCIATED

GAIN vs. FREQUENCY

Frequency, f (GHz)

10.0

MIN

-2.0

= 2 V, I

= 10 mA

NE24283B

TYP

0.35

16.0

11.0

11.8

12.8

83B

-0.8

750

0.6

9.5

0.5

MAX

-0.2

350

0.7

Related parts for NE24283B

NE24283B Summary of contents

Page 1

... GATE LENGTH: 0.25 m • GATE WIDTH: 200 m • HERMETIC METAL/CERAMIC PACKAGE DESCRIPTION The NE24283B is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities ...

Page 2

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Drain to Source Voltage DS V Gate to Source Voltage GSO I Drain Current DS I Gate Current GRF T Channel Temperature CH T Storage Temperature STG P Total Power Dissipation T Note: 1. ...

Page 3

... TYPICAL COMMON SOURCE SCATTERING PARAMETERS j1.0 j0.5 18 GHz j0.2 18 GHz 0.0 0.0 0.2 0.5 -j0.2 -j0.5 -j1.0 NE24283B FREQUENCY S 11 GHz MAG ANG 0.10 0.999 -1.9 0.20 0.999 -3.8 0.50 0.998 -9.5 1.00 0.989 -18.8 1.50 0.976 -27.8 2.00 0.960 -36.7 2.50 0.940 -45.3 3.00 0.920 -53.6 3.50 0.900 -61.6 4.00 0.878 -69.7 4.50 0.852 -77.4 5.00 0.828 -84.5 5.50 0.806 -91.6 6.00 0.784 -97.9 6.50 0.769 -104.3 7.00 0.753 -110.3 7.50 0.739 -115.8 8.00 0.728 -121.3 8.50 0.710 -126.7 9 ...

Page 4

... CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE ORDERING INFORMATION PART NUMBER NE24283B 1. Source 2. Drain 3. Source 4. Gate 0.5 ...

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