NE24283B Renesas Electronics Corporation., NE24283B Datasheet - Page 2

• Manufacturer Part Number: NE24283B
• Description: Ultra Low Noise Pseudomorphic Hj Fet Space Qualified
• Manufacturer: Renesas Electronics Corporation.

ABSOLUTE MAXIMUM RATINGS
Note:
1. Operation in excess of any one of these conditions may result in
permanent damage.
TYPICAL PERFORMANCE CURVES
SYMBOLS
V
T
I
V
T
I
GRF
P
GSO
STG
DS
DS
CH
T
200
100
250
150
50
0
40
30
20
10
50
0
0
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Total Power Dissipation
TOTAL POWER DISSIPATION vs.
25
DRAIN TO SOURCE VOLTAGE
Drain to Source Voltage, V
Ambient Temperature, T
PARAMETERS
AMBIENT TEMPERATURE
1
50
DRAIN CURRENT vs.
Free Air
75
2
100
125
3
150
UNITS
A
Infinite
Heat Sink
DS
mW
mA
( C)
4
V
V
C
C
A
V
-0.2 V
-0.4 V
-0.6 V
(V)
175
GS
0 V
1 (T
200
-65 to +175
RATINGS
5
A
–3.0
I
100
175
165
4.0
DSS
= 25 C)
(T
A
= 25 C)
TYPICAL NOISE PARAMETERS
V
DS
FREQ.
(GHz)
10
12
14
16
18
20
= 2 V, I
1
2
4
6
8
TRANSCONDUCTANCE AND DRAIN CURRENT
0.8
0.6
0.4
0.2
1.4
1.2
100
20
1
0
80
60
40
0
ASSOCIATED GAIN vs. DRAIN CURRENT
DS
0
0
NF
= 10 mA
(dB)
0.30
0.31
0.35
0.38
0.43
0.50
0.60
0.71
0.85
1.00
1.20
vs. GATE TO SOURCE VOLTAGE
5
OPT
Gate to Source Voltage, V
5
NF
10
Drain Current, I
V
NOISE FIGURE AND
10
DS
15
(dB)
22.0
19.0
16.0
14.0
12.5
11.5
11.0
10.3
G
9.8
9.2
9.0
= 2 V, f = 12 GHz
A
20
V
15
DS
25
= 2 V
MAG
0.88
0.82
0.73
0.67
0.63
0.57
0.52
20
0.46
0.40
0.36
0.33
30
DS
(mA)
OPT
25
35 40
GS
G
ANG
A
-176
-155
-134
-109
105
128
156
13
30
57
83
30
(V)
45
(T
35
50
A
Rn/50
14
10
= 25 C)
13
12
11
0.33
0.31
0.26
0.20
0.13
0.09
0.06
0.05
0.04
0.04
0.05
8
7
9