HBD437T Hi-Sincerity Microelectronics Corp., HBD437T Datasheet
HBD437T
Related parts for HBD437T
HBD437T Summary of contents
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... HI-SINCERITY MICROELECTRONICS CORP. HBD437T COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD437T is silison epitaxial-base NPN power transistor in TO-126 plastic package, intented for use in medium power linear and switching applications. The complementary PNP type is HBD438T. Absolute Maximum Ratings Symbol V Collector-Base Voltage (I CBO V Collector-Emitter Voltage (V ...
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... C B 100 125 100 Collector Current I Safe Operating Area 10 1 0.1 1ms 100ms 1s 0. Forward Voltage-V HBD437T 1000 1000 10000 (mA) C 10000 1000 10000 (mA) C 100 (V) CE Spec. No. : HT200201 Issued Date : 2001.04.01 Revised Date : 2005.12.02 Page No. : 2/4 Current Gain & ...
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... Head Office And Factory: Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HBD437T Marking ...
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... L Peak Temperature ( Time within actual Peak Temperature ( Ramp-down Rate o Time Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HBD437T o o C~35 C Humidity=65%±15% Ramp- Preheat Ramp-down Peak Time Sn-Pb Eutectic Assembly o ) <3 C/sec ...