HBD437T Hi-Sincerity Microelectronics Corp., HBD437T Datasheet - Page 2

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HBD437T

Manufacturer Part Number
HBD437T
Description
Complementary Silicon Power Transistors
Manufacturer
Hi-Sincerity Microelectronics Corp.
Datasheet
Characteristics Curve
HBD437T
0.01
1000
1000
0.1
100
100
10
1
10
10
1
1
1
hFE @ V
V
CE(s at)
1ms
Saturation Voltage & Collector Current
Current Gain & Collector Current
@ I
CE
10
10
=1V
C
100ms
=10I
125
25
Collector Current I
Collector Current I
Safe Operating Area
Forward Voltage-V
o
B
C
o
HI-SINCERITY
MICROELECTRONICS CORP.
C
1s
100
100
25
125
10
o
C
o
C
C
C
CE
(mA)
(mA)
(V)
75
o
1000
1000
C
75
o
C
10000
10000
100
1000
10000
100
1000
10
100
1
1
hFE @ V
V
125
BE(on)
125
25
o
Current Gain & Collector Current
C
o
CE
On Voltage & Collector Current
C
o
@ V
C
10
=5V
10
CE
Collector Current I
Collector Current I
=1V
25
o
C
100
100
Spec. No. : HT200201
Issued Date : 2001.04.01
Revised Date : 2005.12.02
Page No. : 2/4
HSMC Product Specification
C
C
(mA)
(mA)
75
o
C
1000
1000
75
o
C
10000
10000

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