NSS12200L ON Semiconductor, NSS12200L Datasheet

NSS12200L

Manufacturer Part Number

NSS12200L

Description

12 V, 4.0 A, Low Vce Sat Pnp Transistor Transistor Sot-23

Manufacturer

ON Semiconductor

Datasheet

1.NSS12200L.pdf (5 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

NSS12200LT1

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NSS12200LT1G

Manufacturer:

Quantity:

18 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NSS12200LT1G

Manufacturer:

ON Semiconductor

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NSS12200LT1G

Manufacturer:

Quantity:

30 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

NSS12200LT1G

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

H&T Electronics

Part Number:

NSS12200LT1G

Quantity:

9 000

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NSS12200LT1G

12 V, 4.0 A, Low V

PNP Transistor

transistors are miniature surface mount devices featuring ultra low

saturation voltage (V

are designed for use in low voltage, high speed switching applications

where affordable efficient energy control is important.

in portable and battery powered products such as cellular and cordless

phones, PDAs, computers, printers, digital cameras and MP3 players.

Other applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

cluster. The high current gain allows e

driven directly from PMU’s control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ 100 mm

2. FR−4 @ 500 mm

3. Thermal response.

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

March, 2007 − Rev. 2

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current − Continuous

Collector Current − Peak

Electrostatic Discharge

Total Device Dissipation

Thermal Resistance,

Total Device Dissipation

Thermal Resistance,

Total Device Dissipation

Junction and Storage

ON Semiconductor’s e

Typical applications are DC−DC converters and power management

This is a Pb−Free Device

Derate above 25°C

Junction−to−Ambient

Derate above 25°C

Junction−to−Ambient

(Single Pulse < 10 sec.)

Temperature Range

= 25°C

Characteristic

Rating

, 1 oz. copper traces.

CE(sat)

= 25°C)

) and high current gain capability. These

PowerEdge family of low V

qJA

Symbol

(Note 3)

(Note 1)

(Note 2)

ESD

Dsingle

(Note 1)

(Note 2)

CEO

CBO

EBO

, T

stg

PowerEdge devices to be

CE(sat)

−55 to

+150

Max

−7.0

−2.0

−4.0

HBM Class 3B

Max

−12

460

270

540

230

710

3.7

4.3

MM Class C

mW/°C

°C/W

Unit

Vdc

CE(sat)

°C

†For information on tape and reel specifications,

NSS12200LT1G

PNP LOW V

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

*Date Code orientation and/or overbar may

EQUIVALENT R

vary depending upon manufacturing location.

(Note: Microdot may be in either location)

Device

ORDERING INFORMATION

VE = Specific Device Code

BASE

DEVICE MARKING

http://onsemi.com

= Date Code*

= Pb−Free Package

SOT−23 (TO−236)

−12 VOLTS

4.0 AMPS

CE(sat)

(Pb−Free)

CASE 318

Package

SOT−23

COLLECTOR

STYLE 6

VE M G

EMITTER

Publication Order Number:

DS(on)

TRANSISTOR

3000/Tape & Reel

Shipping

NSS12200L/D

65 mW

†

Related parts for NSS12200L

NSS12200L Summary of contents

Page 1

... ORDERING INFORMATION Device Package Shipping NSS12200LT1G SOT−23 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSS12200L/D † ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = −10 mAdc Collector −Base Breakdown Voltage (I = −0.1 mAdc Emitter −Base Breakdown Voltage (I = −0.1 mAdc, I ...

Page 3

V CE(sat) IC/ 0.2 0.15 0.1 0.05 0 0.001 0.01 0 COLLECTOR CURRENT (A) C Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 800 150°C (5.0 V) 750 700 150°C (2.0 V) 650 600 ...

Page 4

V , EMITTER BASE VOLTAGE (V) EB Figure 7. Input Capacitance 10 1.0 0.1 0.01 0.01 200 C (pF) ibo 175 150 125 100 ...

Page 5

... L1 0.35 0.54 0.69 0.014 0.021 H 2.10 2.40 2.64 0.083 0.094 E STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR 2.0 0.079 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NSS12200L/D MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 ...

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