NSS12200L ON Semiconductor, NSS12200L Datasheet - Page 2

• Manufacturer Part Number: NSS12200L
• Description: 12 V, 4.0 A, Low Vce Sat Pnp Transistor Transistor Sot-23
• Manufacturer: ON Semiconductor

4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
5. Guaranteed by design but not tested.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SWITCHING CHARACTERISTICS
Delay (V
Rise (V
Storage (V
Fall (V
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note 4)
Collector −Emitter Saturation Voltage (Note 4)
Base −Emitter Saturation Voltage (Note 4)
Base −Emitter Turn−on Voltage (Note 4)
Cutoff Frequency
Input Capacitance (V
Output Capacitance (V
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
CB
EB
= −0.1 mAdc, I
= −10 mAdc, I
= −0.1 mAdc, I
= −10 mA, V
= −500 mA, V
= −1.0 A, V
= −2.0 A, V
= −0.1 A, I
= −1.0 A, I
= −1.0 A, I
= −2.0 A, I
= −1.0 A, I
= −1.0 A, V
= −100 mA, V
CC
CC
= −7.0 Vdc)
= −12 Vdc, I
CC
= −10 V, I
= −10 V, I
CC
= −10 V, I
= −10 V, I
B
B
B
B
B
CE
CE
CE
= −0.010 A) (Note 5)
= −0.100 A)
= −0.010 A)
= −0.200 A)
= −0.01 A)
CE
C
CE
CE
C
B
E
C
= −2.0 V)
= −2.0 V)
= −2.0 V)
E
= 750 mA, I
C
EB
= −2.0 V)
= 0)
= 750 mA, I
= 0)
= 0)
= 0)
= −2.0 V)
= −5.0 V, f = 100 MHz)
= 750 mA, I
C
CB
= −0.5 V, f = 1.0 MHz)
= 750 mA, I
= −3.0 V, f = 1.0 MHz)
Characteristic
B1
B1
B1
= 15 mA)
= 15 mA)
B1
= 15 mA)
= 15 mA)
(T
A
= 25°C unless otherwise noted)
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2
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
Cobo
CE(sat)
I
I
BE(sat)
Cibo
BE(on)
h
CBO
EBO
f
t
t
FE
t
t
T
d
s
r
f
−7.0
Min
−12
−12
250
250
200
150
100
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.008
−0.065
−0.100
−0.130
Typ
300
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.090
−0.120
−0.180
−0.900
−0.900
−0.011
Max
−0.1
−0.1
350
120
120
250
130
60
−
−
−
−
−
−
−
−
mAdc
mAdc
Unit
MHz
Vdc
Vdc
Vdc
pF
pF
ns
ns
ns
ns
V
V
V