BF747 NXP Semiconductors, BF747 Datasheet - Page 3

• Manufacturer Part Number: BF747
• Description: Npn 1 Ghz Wideband Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
6. Thermal characteristics
7. Characteristics
9397 750 13394
Product data sheet
Table 6:
[1]
Table 7:
T
[1]
Symbol
R
Symbol
I
h
f
C
G
CBO
T
j
FE
th(j-s)
re
UM
= 25 C unless otherwise specified.
T
G
G
s
UM
is the temperature at the soldering point of the collector pin.
UM
is the maximum unilateral power gain, assuming s
=
Parameter
collector cut-off
current
DC current gain
transition
frequency
feedback
capacitance
maximum
unilateral power
gain
Thermal characteristics
Characteristics
10 log
Parameter
thermal resistance from junction
to soldering point
----------------------------------------------------- dB
1
–
s
Rev. 03 — 27 July 2004
11
s
2
Conditions
I
I
I
V
f = 500 MHz
I
V
I
V
f = 100 MHz
21
E
C
C
E
C
CE
CB
CE
= 0 A; V
= i
1
= 2 mA; V
= 15 mA;
= 15 mA;
2
–
= 10 V;
= 10 V; f = 1 MHz
= 10 V;
e
= 0 A;
s
22
CB
2
CE
= 10 V
= 10 V
Conditions
T
s
12
70 C
is zero and
[1]
Min
-
40
0.8
-
-
NPN 1 GHz wideband transistor
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Typ
-
95
1.2
0.5
20
[1]
Typ
260
Max
100
250
1.6
-
-
BF747
Unit
K/W
Unit
nA
GHz
pF
dB
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