BF747 NXP Semiconductors, BF747 Datasheet - Page 5

• Manufacturer Part Number: BF747
• Description: Npn 1 Ghz Wideband Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 13394
Product data sheet
Fig 5. Maximum unilateral power gain as a function of
Fig 7. Collector-emitter saturation voltage as a
V
G
(dB)
CEsat
(V)
10
10
UM
40
30
20
10
10
0
1
1
2
10
V
collector current.
I
function of collector current.
C
0
CE
/I
1
B
= 10 V; f = 100 MHz.
= 10.
10
1
20
10
I
I
C
C
(mA)
(mA)
mbb407
mbb398
10
30
Rev. 03 — 27 July 2004
2
Fig 6. Maximum unilateral power gain as a function of
Fig 8. Common emitter noise figure as a function of
G
(dB)
(
dB
UM
F
50
30
10
10
)
8
6
4
2
0
10
I
frequency.
V
collector current.
10
C
CE
= 15 mA; V
1
= 10 V; Z
S
CE
10
= Z
1
= 10 V.
NPN 1 GHz wideband transistor
2
L
= 50 ; f = 100 MHz.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
10
10
3
I
f (MHz)
C
(mA)
mbb408
mbb409
BF747
10
10
4
2
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