MJL16218 ON Semiconductor, MJL16218 Datasheet - Page 2

• Manufacturer Part Number: MJL16218
• Description: Npn Transistor Bipolar Power Deflection Transistor For High And Very High Resolution Monitors
• Manufacturer: ON Semiconductor

MJL16218
(2) Pulse Test: Pulse Width = 300 s, Duty Cycle
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS (2)
ON CHARACTERISTICS (2)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
Collector Cutoff Current (V CE = 1500 V, V BE = 0 V)
Emitter–Base Leakage (V EB = 8.0 Vdc, I C = 0)
Emitter–Base Breakdown Voltage (I E = 1.0 mA, I C = 0)
Collector–Emitter Sustaining Voltage (Table 1) (I C = 10 mAdc, I B = 0)
Collector–Emitter Saturation Voltage (I C = 5.0 Adc, I B = 2.0 Adc)
Base–Emitter Saturation Voltage (I C = 5.0 Adc, I B = 1.0 Adc)
DC Current Gain (I C = 1.0 A, V CE = 5.0 Vdc)
Dynamic Desaturation Interval (I C = 5.5 A, I B1 = 2.2 A, LB = 1.5 H)
Output Capacitance
Gain Bandwidth Product
Inductive Load (I C = 6.0 A, I B = 2.0 A), High Resolution Deflection
2
0.01
(V CE = 10 Vdc, I E = 0, f test = 100 kHz)
(V CE = 10 Vdc, I C = 0.5 A, f test = 1.0 MHz)
Simulator Circuit Table 2
100
1.0
0.1
10
Storage
Fall Time
1.0
Figure 1. Maximum Forward Bias
V CE , COLLECTOR–EMITTER VOLTAGE (V)
(I C = 12 A, V CE = 5.0 Vdc)
Safe Operating Area
10
(V CE = 1200 V, V BE = 0 V)
Characteristic
(I C = 3.0 Adc, I B = 0.6 Adc)
(T C = 25 C unless otherwise noted)
100 ms
100
250 ms
10 ms
2.0%.
SAFE OPERATING AREA
50 ms
1000
V CEO(sus)
V (BR)EBO
V CE(sat)
V BE(sat)
Symbol
I CES
I EBO
h FE
C ob
18
14
10
t ds
t sv
f T
t fi
6
2
0
Motorola Bipolar Power Transistor Device Data
300
Figure 2. Maximum Reverse Bias
V CE , COLLECTOR–EMITTER VOLTAGE (V)
Min
650
8.0
4.0
—
—
—
—
—
—
—
—
—
—
—
—
Safe Operating Area
600
2000
0.17
0.14
Typ
350
300
175
0.9
6.0
0.8
11
24
—
—
—
—
900
3000
Max
250
500
250
1.0
0.5
1.5
25
25
—
—
—
—
—
—
1200
I C /I B = 5
T J 100 C
1500
Unit
MHz
Vdc
Vdc
Vdc
Vdc
Adc
Adc
pF
—
ns
ns