BUJ403A NXP Semiconductors, BUJ403A Datasheet - Page 2

• Manufacturer Part Number: BUJ403A
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
1 Measured with half sine-wave voltage (curve tracer).
December 1998
Silicon Diffused Power Transistor
mb
SYMBOL
I
I
I
I
V
V
V
h
h
h
h
mb
SYMBOL
t
t
t
t
t
t
t
CES
CES
CEO
EBO
on
s
f
s
f
s
f
FE
FE
FEsat
FEsat
CEOsust
CEsat
BEsat
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
,I
CBO
PARAMETER
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
DC current gain
PARAMETER
Switching times (resistive load)
Turn-on time
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
Turn-off storage time
Turn-off fall time
1
1
CONDITIONS
V
V
T
V
V
I
L = 25 mH
I
I
I
I
I
I
CONDITIONS
I
R
I
-V
I
-V
B
C
C
C
C
C
C
Con
Con
Con
j
BE
BE
CEO
EB
L
= 0 A; I
= 2.0 A; I
= 2.0 A; I
= 1 mA; V
= 500 mA;V
= 2.0 A; V
= 3.0 A; V
BB
BB
= 125 ˚C
= 75 ohms; V
= 2.5 A; I
= 2.5 A; I
= 2.5 A; I
= 0 V; V
= 0 V; V
= 7 V; I
= 5 V
= 5 V; T
= V
2
CEOMmax
C
= 10 mA;
C
B
B
CE
CE
CE
CE
CE
j
= 0 A
Bon
Bon
Bon
= 0.4 A
= 0.4 A
= 100 ˚C
CE
= V
= V
= 5 V
= 5 V
= 5 V
(550V)
= -I
= 0.5 A; L
= 0.5 A; L
BB2
= 5 V
CESMmax
CESMmax
Boff
= 4 V;
= 0.5 A;
;
B
B
= 1 H;
= 1 H;
MIN.
550
13
20
13
-
-
-
-
-
-
-
TYP.
TYP.
0.15
0.91
18.5
15.5
170
25
30
-
-
-
-
-
-
-
-
-
-
-
Product specification
MAX.
MAX.
300
300
1.0
2.0
0.1
0.1
1.0
1.5
0.5
0.3
1.5
1.8
BUJ403A
47
25
3
-
-
-
Rev 1.200
UNIT
UNIT
mA
mA
mA
mA
ns
ns
V
V
V
s
s
s
s
s