BUJ403A NXP Semiconductors, BUJ403A Datasheet - Page 4

• Manufacturer Part Number: BUJ403A
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
December 1998
Silicon Diffused Power Transistor
Solid lines = typ values, V
120
110
100
100
Fig.9. Collector-Emitter saturation voltage.
2.0
1.6
1.2
0.8
0.4
0.0
90
80
70
60
50
40
30
20
10
10
Fig.8. Typical DC current gain. h
0.01
0
1
VCEsat/V
0.01
Fig.7. Normalised power dissipation.
0
PD%
h
FE
PD% = 100 PD/PD
20
IC=1A
IC=1A
40
parameter V
0.10
Tj = 25 C
0.1
60
2A
Tmb / C
IC / A
IB/A
3A
80
CEsat
Normalised Power Derating
25˚C
CE
4A
1.00
= f(IB); T
100
= f (T
1
1V
120
mb
FE
5V
)
= f(I
j
=25˚C.
140
C
10.00
10
)
4
Solid lines = typ values, V
Solid lines = typ values, V
Fig.11. Collector-Emitter saturation voltage.
0.01
0.1
10
Fig.10. Base-Emitter saturation voltage.
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1E-06
1
Fig.12. Transient thermal impedance.
0.5
0.4
0.3
0.2
0.1
0.0
0.1
0.1
Zth / (K/W)
VBEsat/V
D=
VCEsat/V
0.05
0.02
Z
0.5
0.2
0.1
th j-mb
0
= f(t); parameter D = t
1E-04
IC/A
IC/A
1
t / s
BEsat
CEsat
1
P
D
1E-02
= f(IC); at IC/IB =4.
= f(IC); at IC/IB =4.
Product specification
t p
T
p
D =
/T
BUJ403A
1E+00
T
t
p
t
Rev 1.200
10
10