PHE13005 NXP Semiconductors, PHE13005 Datasheet - Page 2

• Manufacturer Part Number: PHE13005
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
1 Measured with half sine-wave voltage (curve tracer).
February 1999
Silicon Diffused Power Transistor
mb
SYMBOL
I
I
I
V
V
V
V
V
V
h
h
mb
SYMBOL
t
t
t
t
t
t
CEV
CEV
EBO
s
f
s
f
s
f
FE
FEsat
CEOsust
CEsat
CEsat
CEsat
BEsat
BEsat
= 25˚C unless otherwise specified
= 25˚C unless otherwise specified
PARAMETER
Collector cut-off current
Emitter cut-off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
PARAMETER
Switching times (resistive load)
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
Turn-off storage time
Turn-off fall time
1
CONDITIONS
V
V
T
V
I
I
I
I
I
I
I
I
CONDITIONS
I
R
I
-V
I
-V
B
C
C
C
C
C
C
C
Con
Con
Con
j
BE(off)
BE(off)
EB
L
= 0A; I
= 1.0A; I
= 2.0A; I
= 4.0A; I
= 1.0A; I
= 2.0A; I
= 1.0A; V
= 2.0A; V
BE(off)
BE(off)
= 100˚C
= 75 ; V
= 2.0A; I
= 2.0A; I
= 2.0A; I
= 9V; I
2
= -1.5V; V
= -1.5V; V
= 5V
= 5V; T
C
= 10mA
C
B
B
B
B
B
CE
CE
CC
= 0A
= 0.2A
= 0.5A
= 1.0A
= 0.2A
= 0.5A
Bon
Bon
Bon
= 5V
= 5V
= 250V
j
= -I
= 0.4A; L
= 0.4A; L
= 100˚C
CE
CE
Boff
= V
= V
= 0.4A;
CESMmax
CESMmax
B
B
= 1 H;
= 1 H;
;
MIN.
400
10
8
-
-
-
-
-
-
-
-
TYP.
TYP.
0.85
0.92
0.16
0.1
0.2
0.3
2.7
0.3
1.2
0.1
1.4
20
17
-
-
-
-
Product specification
PHE13005
MAX.
MAX.
1.0
5.0
0.5
0.6
1.0
1.2
1.6
0.9
0.5
0.9
60
40
1
4
2
4
-
Rev 1.000
UNIT
UNIT
mA
mA
mA
V
V
V
V
V
V
s
s
s
s
s
s